18131548. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dong Hoon Hwang of Suwon-si (KR)
Seung Min Song of Suwon-si (KR)
Min Chan Gwak of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18131548 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes various components such as active patterns, gate electrodes, and gate cuts. The device is designed in a specific layout where the first active pattern and the second active pattern are extended in a horizontal direction on a substrate. The first bottom gate electrode is extended in a different horizontal direction on the first active pattern, and the first upper gate electrode is extended in the same direction on the first bottom gate electrode. Similarly, the second bottom gate electrode and the second upper gate electrode are extended on the second active pattern. The first gate cut isolates the first bottom gate electrode from the second bottom gate electrode, and the second portion of the first gate cut isolates the first upper gate electrode from the second upper gate electrode. The width of the second portion is larger than the width of the first portion.
- The semiconductor device has a specific layout with active patterns, gate electrodes, and gate cuts.
- The device includes first and second active patterns extended in a horizontal direction on a substrate.
- It also has first and second bottom gate electrodes extended in a different horizontal direction on the first and second active patterns, respectively.
- The first upper gate electrode is extended in the same direction on the first bottom gate electrode.
- The second upper gate electrode is extended in the same direction on the second bottom gate electrode.
- The first gate cut isolates the first bottom gate electrode from the second bottom gate electrode.
- The second portion of the first gate cut isolates the first upper gate electrode from the second upper gate electrode.
- The width of the second portion is larger than the width of the first portion.
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved
- Efficient isolation of gate electrodes
- Improved layout design for semiconductor devices
- Enhanced performance and functionality of integrated circuits
Benefits
- Increased efficiency in semiconductor manufacturing
- Improved performance and reliability of electronic devices
- Enhanced functionality and integration of integrated circuits
Original Abstract Submitted
In some embodiments, a semiconductor device includes a first active pattern extended in a first horizontal direction on a substrate, a second active pattern extended in the first horizontal direction on the substrate, a first bottom gate electrode extended in a second horizontal direction on the first active pattern, a first upper gate electrode extended in the second horizontal direction on the first bottom gate electrode, a second bottom gate electrode extended in the second horizontal direction on the second active pattern, a second upper gate electrode extended in the second horizontal direction on the second bottom gate electrode, and a first gate cut comprising a first portion isolating the first bottom gate electrode from the second bottom gate electrode and a second portion isolating the first upper gate electrode from the second upper gate electrode. A width of the second portion exceeds a width of the first portion.
