18121222. IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18121222 titled 'IMAGE SENSOR
Simplified Explanation
The abstract describes an image sensor that includes a first layer with photodiodes arranged in pixel regions, an optical region on the upper surface of the first substrate, and an element region. In at least one pixel region, the element region includes a first impurity region, a first transfer gate, a second impurity region, and a second transfer gate. The image sensor also includes a second layer with a second substrate stacked with the first layer, including a first transistor connected to the first impurity region and a second transistor connected to the second impurity region.
- The image sensor consists of a first layer with photodiodes, an optical region, and an element region, and a second layer with transistors.
- The element region in at least one pixel region includes impurity regions and transfer gates.
- The first transistor in the second layer is connected to the first impurity region, and the second transistor is connected to the second impurity region.
Potential applications of this technology:
- Digital cameras and smartphones: The image sensor can be used to capture high-quality images in digital cameras and smartphones.
- Surveillance systems: The image sensor can be used in surveillance cameras to capture clear and detailed images.
- Medical imaging: The image sensor can be utilized in medical devices for capturing medical images with high resolution.
Problems solved by this technology:
- Improved image quality: The image sensor with photodiodes and transistors helps in capturing high-quality images with enhanced clarity and detail.
- Compact design: The stacked structure of the first and second layers allows for a compact image sensor design, making it suitable for small devices like smartphones.
Benefits of this technology:
- High-resolution images: The image sensor enables the capture of high-resolution images, ensuring sharpness and clarity.
- Compact and versatile: The stacked structure of the image sensor allows for a compact design, making it suitable for various applications in different devices.
- Improved image processing: The integration of photodiodes and transistors in the image sensor facilitates efficient image processing and enhances overall image quality.
Original Abstract Submitted
An image sensor including: a first layer including a plurality of photodiodes arranged in a plurality of pixel regions in a first substrate, an optical region disposed on an upper surface of the first substrate, and an element region, wherein, in at least one of the plurality of pixel regions, the element region includes a first impurity region, a first transfer gate disposed between the first impurity region and the photodiode, a second impurity region isolated from the first impurity region, and a second transfer gate disposed between the second impurity region and the photodiode: and a second layer including a second substrate stacked with the first layer, wherein the second layer includes a first transistor connected to the first impurity region by a first contact, and a second transistor connected to the second impurity region by a second contact.
