18119556. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18119556 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The abstract describes an integrated circuit device that includes a word line on active regions and a device isolation film. The word line consists of first conductive patterns spaced apart from each other in a horizontal direction, with each pattern covering a pair of adjacent active regions. The device isolation film is located between each active region of the pair. Second conductive patterns are arranged between the first conductive patterns, with each pattern covering a portion of the device isolation film. The lowermost surface of the first conductive patterns is at a greater vertical distance from the substrate compared to the lowermost surface of the second conductive patterns.
- The integrated circuit device includes a word line on active regions and a device isolation film.
- The word line consists of first conductive patterns spaced apart in a horizontal direction.
- Each first conductive pattern covers a pair of adjacent active regions.
- The device isolation film is located between each active region of the pair.
- Second conductive patterns are arranged between the first conductive patterns.
- Each second conductive pattern covers a portion of the device isolation film.
- The lowermost surface of the first conductive patterns is at a greater vertical distance from the substrate compared to the lowermost surface of the second conductive patterns.
Potential applications of this technology:
- Integrated circuit manufacturing
- Semiconductor industry
- Electronics industry
Problems solved by this technology:
- Improved integration of word lines and device isolation film
- Enhanced performance and reliability of integrated circuits
Benefits of this technology:
- Higher density of integrated circuits
- Improved functionality and efficiency of electronic devices
- Enhanced performance and reliability of integrated circuits
Original Abstract Submitted
An integrated circuit device includes a word line on active regions and a device isolation film and extending in a first horizontal direction. The word line includes first conductive patterns spaced apart from each other in the first horizontal direction. Each of the first conductive patterns covers a pair of active regions that are immediately adjacent to each other in the first horizontal direction, and a first portion of the device isolation film between each active region of the pair of active regions. Second conductive patterns are arranged one-by-one between the first conductive patterns. Each of the second conductive patterns covers a second portion of the device isolation film. A first vertical distance from the substrate to a lowermost surface of each of the first conductive patterns is greater than a second vertical distance from the substrate to a lowermost surface of each of the second conductive patterns.
