18115165. POWER SEMICONDUCTOR DEVICE simplified abstract (Kia Corporation)
Contents
- 1 POWER SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 POWER SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to traditional silicon-based power semiconductor devices in terms of performance and efficiency?
- 1.9.3 What are the specific manufacturing processes involved in creating the buried gates and base regions in the SiC semiconductor layer?
- 1.10 Original Abstract Submitted
POWER SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jong Seok Lee of Suwon-si (KR)
POWER SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18115165 titled 'POWER SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a power semiconductor device with a silicon carbide (SiC) semiconductor layer, buried gates, base regions, source regions, and a source electrode.
- Silicon carbide (SiC) semiconductor layer
- Buried first and second gates
- First base region with a first conductive type
- Second base region with a second conductive type
- First source region contacting first and second base regions with second conductive type
- Second source region contacting first and second base regions with first conductive type
- Source electrode contacting first and second source regions
Potential Applications
The technology can be applied in high-power electronics, electric vehicles, renewable energy systems, and industrial motor drives.
Problems Solved
This technology addresses the need for efficient power semiconductor devices with improved performance, reliability, and power handling capabilities.
Benefits
The benefits of this technology include higher efficiency, faster switching speeds, lower power losses, and increased power density in electronic systems.
Potential Commercial Applications
The technology can be commercialized in the manufacturing of power electronics components for various industries, including automotive, aerospace, renewable energy, and industrial automation.
Possible Prior Art
One possible prior art could be the use of silicon-based power semiconductor devices with similar structures but lacking the advantages of silicon carbide (SiC) material.
Unanswered Questions
How does this technology compare to traditional silicon-based power semiconductor devices in terms of performance and efficiency?
This article does not directly compare the performance and efficiency of the new SiC-based device with traditional silicon-based devices.
What are the specific manufacturing processes involved in creating the buried gates and base regions in the SiC semiconductor layer?
The article does not detail the specific manufacturing processes used to create the buried gates and base regions in the SiC semiconductor layer.
Original Abstract Submitted
A power semiconductor device includes a silicon carbide (SiC) semiconductor layer, a first gate and a second gate buried in the semiconductor layer, a first base region positioned at least at one side of the first gate and having a first conductive type, a second base region positioned at least at one side of the second gate and a second conductive type, a first source region positioned at least at one side of the first gate to make contact with the first base region and the second base region and having the second conductive type, a second source region positioned at least at one side of the second gate to make contact with the first base region and the second base region and having the first conductive type, and a source electrode positioned over the semiconductor layer to make contact with the first source region and the second source region.
