18107138. CAPACITOR STRUCTURE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE STRUCTURE, AND METHOD FOR MANUFACTURING THE STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
CAPACITOR STRUCTURE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE STRUCTURE, AND METHOD FOR MANUFACTURING THE STRUCTURE
Organization Name
Inventor(s)
Cheol Jin Cho of Suwon-si (KR)
Young-Lim Park of Suwon-si (KR)
CAPACITOR STRUCTURE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE STRUCTURE, AND METHOD FOR MANUFACTURING THE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18107138 titled 'CAPACITOR STRUCTURE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE STRUCTURE, AND METHOD FOR MANUFACTURING THE STRUCTURE
Simplified Explanation
The patent application describes a capacitor structure consisting of lower and upper electrodes with a capacitor dielectric film in between. The lower electrode includes a lower electrode film with a first metal element, a first doped oxide film with a second metal element and an oxide of the first metal element, and a first metal oxide film without the second metal element. The upper electrode includes an upper electrode film with the first metal element, a second doped oxide film with the second metal element and an oxide of the first metal element, and a second metal oxide film without the second metal element.
- The capacitor structure includes lower and upper electrodes with a dielectric film in between.
- The lower electrode consists of a lower electrode film, a first doped oxide film, and a first metal oxide film.
- The upper electrode consists of an upper electrode film, a second doped oxide film, and a second metal oxide film.
- The lower and upper electrode films contain a first metal element.
- The first doped oxide film and the second doped oxide film contain a second metal element and an oxide of the first metal element.
- The first metal oxide film and the second metal oxide film contain an oxide of the first metal element but do not contain the second metal element.
Potential applications of this technology:
- Capacitors in electronic devices such as smartphones, laptops, and tablets.
- Energy storage systems.
- Power electronics.
Problems solved by this technology:
- Improved performance and reliability of capacitors.
- Enhanced energy storage capabilities.
- Reduction in size and weight of electronic devices.
Benefits of this technology:
- Higher capacitance and energy density.
- Increased efficiency and power handling.
- Improved stability and durability.
Original Abstract Submitted
A capacitor structure includes lower and electrodes, and a capacitor dielectric film interposed therebetween. The lower electrode includes a lower electrode film including a first metal element, a first doped oxide film including a second metal element and an oxide of the first metal element, and a first metal oxide film. The first metal oxide film includes an oxide of the first metal element and is free of the second metal element. The upper electrode includes an upper electrode film including the first metal element, a second doped oxide film including the second metal element and an oxide of the first metal element, and a second metal oxide film that includes an oxide of the first metal element, and is free of the second metal element.
