18099097. SEMICONDUCTOR MANUFACTURING METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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SEMICONDUCTOR MANUFACTURING METHOD

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wen-Chih Chiou of Hsinchu (TW)

Yen-Ming Chen of Hsinchu (TW)

Yung-Chi Lin of Hsinchu (TW)

SEMICONDUCTOR MANUFACTURING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18099097 titled 'SEMICONDUCTOR MANUFACTURING METHOD

Simplified Explanation

The semiconductor manufacturing method described in the abstract involves forming semiconductor elements with bonding films and stressing films, and then bonding these elements together. Here is a simplified explanation of the patent application:

  • A first semiconductor element is formed with a bonding film and a stressing film on opposite sides.
  • The stressing film causes the bonding film to have a convex surface.
  • A second semiconductor element is formed with a bonding film on one side.
  • The first and second semiconductor elements are bonded by connecting their respective bonding films.

Potential Applications

This technology could be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and memory chips.

Problems Solved

This method helps in improving the bonding strength and reliability of semiconductor elements, leading to better overall performance of semiconductor devices.

Benefits

The use of stressing films and bonding films enhances the bonding process, resulting in stronger connections between semiconductor elements. This can lead to increased efficiency and durability of semiconductor devices.

Potential Commercial Applications

This technology could be utilized in the production of consumer electronics, automotive electronics, and industrial equipment, among other applications.

Possible Prior Art

One possible prior art could be the use of bonding films in semiconductor manufacturing processes to improve bonding strength. However, the specific use of stressing films to create convex surfaces on bonding films may be a novel aspect of this innovation.

Unanswered Questions

How does this method compare to traditional semiconductor bonding techniques?

This article does not provide a direct comparison between this method and traditional semiconductor bonding techniques. It would be interesting to know the specific advantages or disadvantages of this new approach in comparison to existing methods.

What are the potential limitations or challenges of implementing this technology on a large scale?

The article does not address any potential limitations or challenges that may arise when implementing this technology on a large scale. Understanding the scalability and practicality of this method in mass production could be crucial for its adoption in the semiconductor industry.


Original Abstract Submitted

A semiconductor manufacturing method is provided. The semiconductor manufacturing method includes the following steps. A first semiconductor element with a bonding film and a first stressing film is formed. The first bonding film and the first stressing film are formed on two opposite sides of the first semiconductor element. The first stressing film makes the first bonding film to have a first convex surface. A second semiconductor element with a second bonding film is formed. The second bonding film is formed on one side of the second semiconductor element. The first semiconductor element and the second semiconductor element are bonded by bonding the first bonding film and the second bonding film.