18094839. METHODS OF FORMING PHOTONIC DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
METHODS OF FORMING PHOTONIC DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Tao-Cheng Liu of Hsinchu City (TW)
Shih-Chi Kuo of Yangmel City (TW)
METHODS OF FORMING PHOTONIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18094839 titled 'METHODS OF FORMING PHOTONIC DEVICES
Simplified Explanation
The patent application describes a method for forming tiers and recessed regions in a substrate using dummy layers and etching operations.
- The method involves creating a first set of tiers with two dummy layers over a substrate, where the second dummy layer is placed above the first dummy layer within each tier.
- A second set of recessed regions is then formed in the first set of tiers, with some of these recessed regions extending through different numbers of the second dummy layers.
- Finally, an etching operation is performed to simultaneously create a third set of trenches with varying depths in the substrate through the recessed regions that pass through different numbers of the second dummy layers.
Potential applications of this technology:
- Semiconductor manufacturing: This method can be used in the fabrication of semiconductor devices, where the creation of tiers and trenches with different depths is crucial for the integration of various components.
- Microelectronics: The method can also be applied in the production of microelectronic devices, enabling the formation of complex structures and features with precise control over their depths.
Problems solved by this technology:
- Simplified fabrication process: The use of dummy layers and the concurrent etching operation streamline the manufacturing process, reducing the complexity and time required for creating tiers and trenches with different depths.
- Improved precision: By controlling the number of dummy layers and the depth of the recessed regions, this method allows for the precise formation of trenches with varying depths, ensuring the accuracy and reliability of the final product.
Benefits of this technology:
- Time and cost savings: The simplified process and reduced complexity result in shorter manufacturing cycles and lower production costs.
- Enhanced functionality: The ability to create tiers and trenches with different depths enables the integration of diverse components and structures, expanding the functionality and performance of the devices produced.
Original Abstract Submitted
A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.
