View source for 18067703. STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)

=STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE=


==Organization Name==

[[:Category:TEXAS INSTRUMENTS INCORPORATED|TEXAS INSTRUMENTS INCORPORATED]]


[[Category:TEXAS INSTRUMENTS INCORPORATED]]

==Inventor(s)==

[[:Category:Yoshihiro Takei of USHIKU (JP)|Yoshihiro Takei of USHIKU (JP)]][[Category:Yoshihiro Takei of USHIKU (JP)]]

[[:Category:Mitsuhiro Sugimoto of TSUKUBA (JP)|Mitsuhiro Sugimoto of TSUKUBA (JP)]][[Category:Mitsuhiro Sugimoto of TSUKUBA (JP)]]

[[:Category:Byron Lovell Williams of Plano TX (US)|Byron Lovell Williams of Plano TX (US)]][[Category:Byron Lovell Williams of Plano TX (US)]]

[[:Category:Jeffrey Alan West of Dallas TX (US)|Jeffrey Alan West of Dallas TX (US)]][[Category:Jeffrey Alan West of Dallas TX (US)]]

==STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18067703 titled 'STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE

==Simplified Explanation==

The microelectronic device described in the patent application includes an isolation device with a stabilized dielectric. The isolation device consists of a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between them. The dielectric sidewall of the inorganic dielectric plateau is stabilized using a nitrogen-containing plasma to form a SiON surface, which helps reduce moisture ingress into the dielectric stack of the plateau.

* Lower isolation element
* Upper isolation element
* Inorganic dielectric plateau
* Stabilization of dielectric sidewall
* SiON surface formation
* Moisture ingress reduction

== Potential Applications ==
The technology described in this patent application could be applied in various microelectronic devices where moisture ingress needs to be minimized, such as sensors, actuators, and communication devices.

== Problems Solved ==
1. Moisture ingress into the dielectric stack of the inorganic dielectric plateau.
2. Stabilization of the dielectric sidewall in microelectronic devices.

== Benefits ==
1. Improved reliability and longevity of microelectronic devices.
2. Enhanced performance by reducing the impact of moisture on the dielectric stack.

== Potential Commercial Applications ==
Optimizing Dielectric Stability in Microelectronic Devices

== Possible Prior Art ==
Prior art in the field of microelectronics may include methods for dielectric stabilization and moisture ingress reduction in semiconductor devices.

=== Unanswered Questions ===

=== How does the SiON surface affect the overall performance of the isolation device? ===
The SiON surface helps reduce moisture ingress, but its impact on other aspects of the device's performance is not explicitly mentioned in the abstract.

=== What specific types of microelectronic devices could benefit the most from this technology? ===
While some examples are provided, a more detailed analysis of the potential applications in different types of microelectronic devices would be helpful.


==Original Abstract Submitted==

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiONsurface on the dielectric sidewall of the inorganic dielectric plateau. The SiONsurface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.



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