18057328. NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE DEVICE, AND MEMORY SYSTEM INCLUDING THE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE DEVICE, AND MEMORY SYSTEM INCLUDING THE DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE DEVICE, AND MEMORY SYSTEM INCLUDING THE DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE DEVICE, AND MEMORY SYSTEM INCLUDING THE DEVICE
Organization Name
Inventor(s)
NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE DEVICE, AND MEMORY SYSTEM INCLUDING THE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18057328 titled 'NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE DEVICE, AND MEMORY SYSTEM INCLUDING THE DEVICE
Simplified Explanation
The abstract describes a non-volatile memory device and a method of operating it, as well as a memory system that includes the device. The memory device includes a memory cell array with multiple memory cells that can be programmed to different states. It also includes a page buffer circuit with multiple page buffers that store data as state data indicating the target state of each memory cell. The page buffer circuit can perform a state data reordering operation during a program operation on selected memory cells, and a reordering control circuit controls this operation.
- The non-volatile memory device has a memory cell array with multiple memory cells.
- The memory cells can be programmed to different states.
- The device includes a page buffer circuit with multiple page buffers.
- The page buffers store data as state data indicating the target state of each memory cell.
- The page buffer circuit can perform a state data reordering operation during a program operation on selected memory cells.
- The reordering control circuit controls the page buffer circuit to perform the state data reordering operation simultaneously with the program operation.
Potential Applications
- Non-volatile memory devices are commonly used in various electronic devices such as smartphones, tablets, and computers.
- This technology can improve the performance and efficiency of non-volatile memory devices, making them more suitable for use in high-speed data storage and processing applications.
Problems Solved
- Non-volatile memory devices often face challenges in terms of programming speed and efficiency.
- The state data reordering operation helps optimize the program operation, improving the overall performance of the memory device.
- By performing the state data reordering operation simultaneously with the program operation, the memory device can achieve faster programming speeds and more efficient data storage.
Benefits
- Faster programming speeds: The state data reordering operation allows for simultaneous programming and reordering, reducing the overall programming time.
- Improved efficiency: By optimizing the program operation, the memory device can achieve higher data storage and processing efficiency.
- Enhanced performance: The combination of faster programming speeds and improved efficiency results in a memory device that can handle high-speed data storage and processing tasks more effectively.
Original Abstract Submitted
A non-volatile memory device, a method of operating the non-volatile memory device, and a memory system including the non-volatile memory device are provided. A non-volatile memory device includes a memory cell array including a plurality of memory cells configured to be each programmed to one state of a plurality of states, a page buffer circuit including a plurality of page buffers configured to each store received data as state data indicating a target state of a corresponding one of the plurality of memory cells, the page buffer circuit being configured to perform a state data reordering operation of changing a first state data order into a second state data order during performance of a program operation on selected memory cells of the plurality of memory cells, and a reordering control circuit configured to control the page buffer circuit to perform the state data reordering operation simultaneously with the program operation.
