18054970. METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL LAYER DEFINING AIR-GAP, AND SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL LAYER DEFINING AIR-GAP, AND SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL LAYER DEFINING AIR-GAP, AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL LAYER DEFINING AIR-GAP, AND SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jungsoo Yoon of Hwaseong-si (KR)
Keunwook Shin of Yongin-si (KR)
METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL LAYER DEFINING AIR-GAP, AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18054970 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL LAYER DEFINING AIR-GAP, AND SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method of fabricating a semiconductor device that includes a two-dimensional material layer defining an air-gap. The method involves forming a structure on a substrate with an opening, loading the substrate into a process chamber, forming at least one two-dimensional material layer on the structure's upper surface to create an air-gap, and unloading the substrate from the process chamber.
- The method involves creating a two-dimensional material layer on a structure to form an air-gap.
- The air-gap is defined by the two-dimensional material layer.
- The method allows for the fabrication of a semiconductor device with an air-gap using a simplified process.
Potential Applications
- This technology can be used in the fabrication of various semiconductor devices, such as transistors, integrated circuits, and sensors.
- The air-gap created by the two-dimensional material layer can improve the performance and efficiency of these semiconductor devices.
Problems Solved
- The method provides a simplified process for fabricating a semiconductor device with an air-gap.
- The use of two-dimensional material layers allows for precise control and definition of the air-gap.
Benefits
- The fabrication method enables the creation of semiconductor devices with improved performance and efficiency.
- The use of two-dimensional material layers provides flexibility and control in defining the air-gap.
- The simplified process reduces manufacturing complexity and cost.
Original Abstract Submitted
A method of fabricating a semiconductor device including a two-dimensional material layer defining an air-gap, and the semiconductor device therefrom are provided. The method of fabricating a semiconductor device, includes forming a structure on a substrate, wherein the structure has an opening; loading the substrate into a process chamber; forming at least one two-dimensional material layer on an upper surface of the structure so as to overlie the opening and form an air-gap, wherein an upper portion of the air-gap is defined by the at least one two-dimensional material layer; and unloading the substrate from the process chamber.
