18052350. MEMORY DEVICE FOR IMPROVING SPEED OF PROGRAM OPERATION AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
MEMORY DEVICE FOR IMPROVING SPEED OF PROGRAM OPERATION AND OPERATING METHOD THEREOF
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MEMORY DEVICE FOR IMPROVING SPEED OF PROGRAM OPERATION AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18052350 titled 'MEMORY DEVICE FOR IMPROVING SPEED OF PROGRAM OPERATION AND OPERATING METHOD THEREOF
Simplified Explanation
The abstract describes a memory device and its operating method that aim to improve the speed of program operations. The device includes a memory cell array, a voltage generator, and a control logic. The memory cells are subjected to program and verify operations, and the control logic performs a control operation to execute a first program and a second program loop. The second program operation is based on a compensation voltage level determined from the result of the first verify operation. The first verify operation includes even and odd sensing on the respective bit lines.
- The memory device improves the speed of program operations.
- It includes a memory cell array, a voltage generator, and a control logic.
- The control logic performs a control operation to execute a first and second program loop.
- The second program operation is based on a compensation voltage level determined from the result of the first verify operation.
- The first verify operation includes even and odd sensing on the respective bit lines.
Potential Applications
This technology can be applied in various fields where fast program operations are required, such as:
- Computer systems
- Mobile devices
- Embedded systems
- Artificial intelligence applications
Problems Solved
The memory device addresses the following problems:
- Slow program operations in memory devices
- Inefficient utilization of voltage levels for program and verify operations
- Lack of control logic to optimize program operations based on previous verify results
Benefits
The benefits of this memory device and operating method are:
- Improved speed of program operations
- Efficient utilization of voltage levels
- Optimal control logic for program operations based on previous verify results
Original Abstract Submitted
A memory device for improving the speed of a program operation and an operating method thereof is provided. The memory device includes a memory cell array including a plurality of memory cells, a voltage generator configured to generate voltages for one or more program operations and a verify operation performed on the plurality of memory cells, a control logic configured to perform a control operation on the plurality of memory cells so that a first program and a second program loop are performed, a second program operation being performed based on a compensation voltage level determined based on a result of the first verify operation, and a plurality of bit lines connected to the memory cell array, wherein the first verify operation includes first even sensing and second even sensing on even-numbered bit lines, and first odd sensing and second odd sensing on odd-numbered bit lines.
