18045846. SENSE AMPLIFIER CIRCUIT, MEMORY DEVICE INCLUDING THE SAME AND SENSING METHOD OF MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SENSE AMPLIFIER CIRCUIT, MEMORY DEVICE INCLUDING THE SAME AND SENSING METHOD OF MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Changyoung Lee of Suwon-sI (KR)

Kyu-Chang Kang of Suwon-si (KR)

Donghak Shin of Suwon-si (KR)

Hyun-Chul Yoon of Suwon-si (KR)

SENSE AMPLIFIER CIRCUIT, MEMORY DEVICE INCLUDING THE SAME AND SENSING METHOD OF MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18045846 titled 'SENSE AMPLIFIER CIRCUIT, MEMORY DEVICE INCLUDING THE SAME AND SENSING METHOD OF MEMORY DEVICE

Simplified Explanation

The abstract describes a sense amplifier circuit that includes various transistors and inverters to amplify and transfer voltages between different nodes. A precharge circuit is used to transfer different voltages to the nodes during different periods.

  • The circuit includes a first transistor connected between a first bitline and a first node.
  • A first inverter is connected to the first node and includes an input and output terminal.
  • A second inverter is connected to a second node and includes an input and output terminal.
  • A second transistor is connected between the first output terminal and the second node.
  • A third transistor is connected between the second output terminal and the first node.
  • A precharge circuit transfers a first voltage to the first and second nodes during a first period.
  • The precharge circuit transfers a second voltage, higher than the first voltage, to the first and second nodes during a second period.

Potential Applications

  • Memory circuits
  • Data storage systems
  • Signal processing systems

Problems Solved

  • Amplification and transfer of voltages between different nodes in a circuit
  • Efficient precharging of nodes with different voltages

Benefits

  • Improved performance and efficiency of sense amplifier circuits
  • Enhanced data processing and storage capabilities


Original Abstract Submitted

In a sense amplifier circuit, a first transistor is electrically connected between a first bitline and a first node, a first inverter includes a first input terminal and a first output terminal connected to the first node, and a second inverter includes a second input terminal connected to a second node and a second output terminal. A second transistor is electrically connected between the first output terminal and the second node, and a third transistor is electrically connected between the second output terminal and the first node. A precharge circuit transfers a first voltage to the first and second nodes during a first period, and transfers a second voltage higher than the first voltage to the first and second nodes during a second period.