18036383. METHOD FOR PATTERNING QUANTUM DOT LAYER simplified abstract (BOE Technology Group Co., Ltd.)

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METHOD FOR PATTERNING QUANTUM DOT LAYER

Organization Name

BOE Technology Group Co., Ltd.

Inventor(s)

Xiaoyuan Zhang of Beijing (CN)

METHOD FOR PATTERNING QUANTUM DOT LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18036383 titled 'METHOD FOR PATTERNING QUANTUM DOT LAYER

Simplified Explanation

The patent application describes a method for patterning a quantum dot layer on a substrate using a front film layer and a sacrificial layer. One of these layers is hydrophilic and the other is hydrophobic. The process involves forming a photoresist with a through hole on the sacrificial layer, etching the sacrificial layer in the target region, laying a quantum dot material, curing the quantum dots material, and removing the remaining sacrificial layer and photoresist to form a patterned quantum dot layer.

  • The method involves stacking a hydrophilic sacrificial layer and a hydrophobic front film layer on a substrate.
  • A photoresist with a through hole is formed on the sacrificial layer to define the target region.
  • The sacrificial layer is etched in the target region while being shielded by the photoresist.
  • A quantum dot material is laid and cured in the target region.
  • The remaining sacrificial layer and photoresist are removed, leaving a patterned quantum dot layer in the target region.

Potential Applications

  • Quantum dot displays and lighting devices
  • Quantum dot solar cells
  • Quantum dot sensors and detectors

Problems Solved

  • Precise patterning of quantum dot layers on substrates
  • Controlling the placement and distribution of quantum dots
  • Simplifying the fabrication process for quantum dot devices

Benefits

  • Enables the creation of high-resolution and high-performance quantum dot devices
  • Provides a cost-effective and efficient method for patterning quantum dot layers
  • Allows for customization and optimization of quantum dot device properties


Original Abstract Submitted

A method for patterning a quantum dot layer comprises: forming, on a substrate (), a front film layer and a sacrificial layer () which are stacked in sequence, wherein one of the sacrificial layer and the front film layer is hydrophilic, and the other of the sacrificial layer and the front film layer is hydrophobic; forming a photoresist () having a through hole on the sacrificial layer, wherein the through hole corresponds to a target region, and etching the sacrificial layer in the target region under the shielding of the photoresist; laying a quantum dot material, and curing the quantum dots material of the target region; and removing the remaining sacrificial layer and the photoresist, and forming a patterned quantum dot layer in the target region.

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