18033489. PATTERNED QUANTUM DOT FILM LAYER, QUANTUM DOT LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD simplified abstract (BOE Technology Group Co., Ltd.)

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PATTERNED QUANTUM DOT FILM LAYER, QUANTUM DOT LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD

Organization Name

BOE Technology Group Co., Ltd.

Inventor(s)

Haowei Wang of Beijing (CN)

PATTERNED QUANTUM DOT FILM LAYER, QUANTUM DOT LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18033489 titled 'PATTERNED QUANTUM DOT FILM LAYER, QUANTUM DOT LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD

Simplified Explanation

The patent application describes a method for manufacturing a patterned quantum dot film layer and a quantum dot light-emitting device. Here are the key points:

  • The method involves forming a patterned mask layer on a base substrate.
  • A quantum dot thin film is then formed on the side of the mask layer facing away from the base substrate. This thin film consists of quantum dot bodies and native ligands connected to the quantum dot bodies.
  • A ligand thin film is formed on the side of the quantum dot thin film facing away from the mask layer. This thin film includes replacement ligands.
  • The native ligands are replaced by the replacement ligands by allowing the thin film to stand for a certain duration.
  • Cleaning is performed using a cleaning solvent to remove any unreacted replacement ligands and replaced native ligands.
  • The mask layer is peeled off, along with the quantum dot thin film attached to it.

Potential applications of this technology:

  • Quantum dot light-emitting devices: The manufacturing method described can be used to produce quantum dot light-emitting devices with patterned quantum dot film layers. These devices have potential applications in display technologies, lighting, and optoelectronics.

Problems solved by this technology:

  • Patterned quantum dot film layers: The method allows for the precise formation of patterned quantum dot film layers, which can be challenging using conventional techniques. This solves the problem of achieving controlled patterning in quantum dot devices.

Benefits of this technology:

  • Improved device performance: The precise patterning of quantum dot film layers can lead to improved device performance, such as enhanced color purity and efficiency in quantum dot light-emitting devices.
  • Simplified manufacturing process: The method described simplifies the manufacturing process by allowing for the replacement of native ligands with replacement ligands, followed by cleaning and peeling off the mask layer. This reduces the complexity and cost of production.


Original Abstract Submitted

A patterned quantum dot film layer, a quantum dot light-emitting device and a manufacturing method. The manufacturing method includes: forming a patterned mask layer on one side of a base substrate; forming a quantum dot thin film on the side of the mask layer that faces away from the base substrate, the quantum dot thin film includes quantum dot bodies and native ligands connected to the quantum dot bodies; forming, on the side of the quantum dot thin film that faces away from the mask layer, a ligand thin film that includes replacement ligands, and leaving same to stand for a first duration, such that the native ligands are replaced by the replacement ligands; performing cleaning by means of a cleaning solvent, removing unreacted replacement ligands and replaced native ligands; peeling off the mask layer, and removing together the quantum dot thin film attached to the mask layer.

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