17994031. DISPLAY PANEL AND METHOD FOR FABRICATING SAME simplified abstract (Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.)
Contents
- 1 DISPLAY PANEL AND METHOD FOR FABRICATING SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DISPLAY PANEL AND METHOD FOR FABRICATING SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
DISPLAY PANEL AND METHOD FOR FABRICATING SAME
Organization Name
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
Inventor(s)
DISPLAY PANEL AND METHOD FOR FABRICATING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17994031 titled 'DISPLAY PANEL AND METHOD FOR FABRICATING SAME
Simplified Explanation
The method described in the patent application involves fabricating a display panel by converting N-type doped amorphous silicon structures into N-type heavily doped polysilicon structures through blue laser annealing, along with other steps such as forming an amorphous silicon layer and patterning the polysilicon layer to form a semiconductor layer.
- Forming a plurality of N-type doped amorphous silicon structures on a substrate
- Forming an amorphous silicon layer covering the N-type doped amorphous silicon structures and the substrate
- Blue laser annealing the amorphous silicon layer and the N-type doped amorphous silicon structures to convert them into polysilicon structures of different doping levels
- Patterning the polysilicon layer to form a semiconductor layer
Potential Applications
This technology could be applied in the manufacturing of high-quality display panels for electronic devices such as smartphones, tablets, and televisions.
Problems Solved
This method solves the problem of efficiently converting amorphous silicon structures into polysilicon structures with different doping levels, which is crucial for the performance of semiconductor devices in display panels.
Benefits
The benefits of this technology include improved display panel quality, enhanced device performance, and potentially lower manufacturing costs due to the efficient conversion process.
Potential Commercial Applications
"Display Panel Fabrication Method for Semiconductor Devices" - Optimizing display panel manufacturing processes for improved device performance and cost-efficiency.
Possible Prior Art
One possible prior art could be the use of traditional annealing methods for converting amorphous silicon into polysilicon, which may not be as efficient or precise as the blue laser annealing method described in this patent application.
Unanswered Questions
How does the blue laser annealing process affect the overall efficiency of the display panel fabrication?
The article does not provide specific details on the efficiency improvements brought about by the blue laser annealing process compared to traditional methods.
What are the potential limitations or challenges in implementing this fabrication method on an industrial scale?
The article does not address any potential obstacles or difficulties that may arise when scaling up this fabrication method for mass production.
Original Abstract Submitted
A method for fabricating a display panel includes: forming a plurality of N-type doped amorphous silicon structures on a substrate; forming an amorphous silicon layer covering the N-type doped amorphous silicon structures and the substrate; blue laser annealing the amorphous silicon layer and the N-type doped amorphous silicon structures, so that the N-type doped amorphous silicon structures are converted into N-type heavily doped polysilicon structures, a part of the amorphous silicon layer in contact with one of the N-type doped amorphous silicon structures and located between two adjacent N-type doped amorphous silicon structures is converted into an N-type lightly doped polysilicon structure, and other parts of the amorphous silicon layer are converted into a polysilicon layer; and patterning the polysilicon layer to form a semiconductor layer.
