17991940. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17991940 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a transistor and a capacitor structure. The capacitor structure is electrically connected to the transistor and consists of a first electrode, a dielectric layer structure, and a second electrode. The dielectric layer structure includes an interfacial layer, a first dielectric layer made of a ferroelectric material, antiferroelectric material, or a combination of both, an insertion layer, and a second dielectric layer made of a paraelectric material.
- The semiconductor device includes a transistor and a capacitor structure.
- The capacitor structure is electrically connected to the transistor.
- The capacitor structure consists of a first electrode, a dielectric layer structure, and a second electrode.
- The dielectric layer structure includes an interfacial layer, a first dielectric layer made of a ferroelectric material, antiferroelectric material, or a combination of both, an insertion layer, and a second dielectric layer made of a paraelectric material.
Potential applications of this technology:
- Memory devices: The ferroelectric and antiferroelectric materials in the dielectric layer structure can be used to create non-volatile memory devices with high data retention and low power consumption.
- Sensor devices: The capacitor structure can be used in sensor devices to detect and measure physical quantities such as temperature, pressure, or strain.
- Integrated circuits: The semiconductor device can be integrated into various electronic circuits, enabling the development of advanced electronic systems.
Problems solved by this technology:
- Improved performance: The use of ferroelectric, antiferroelectric, and paraelectric materials in the dielectric layer structure can enhance the performance of the semiconductor device, such as increased data retention, reduced power consumption, and improved sensitivity in sensor devices.
- Miniaturization: The semiconductor device allows for miniaturization of electronic circuits, enabling the development of smaller and more compact devices.
Benefits of this technology:
- Enhanced memory capabilities: The use of ferroelectric and antiferroelectric materials in the dielectric layer structure enables the creation of non-volatile memory devices with high data retention and low power consumption.
- Improved sensor performance: The capacitor structure can be used in sensor devices to provide accurate and sensitive measurements of physical quantities.
- Compact and efficient electronic systems: The semiconductor device allows for the integration of advanced electronic circuits into smaller and more efficient systems.
Original Abstract Submitted
A semiconductor device includes a transistor disposed on a substrate; and a capacitor structure electrically connected to the transistor, wherein the capacitor structure includes a first electrode; a dielectric layer structure disposed on the first electrode; and a second electrode disposed on the dielectric layer structure, the dielectric layer structure includes an interfacial layer disposed on the first electrode; a first dielectric layer disposed on the interfacial layer and including any one of a ferroelectric material, an antiferroelectric material, and a combination of a ferroelectric material and an antiferroelectric material; an insertion layer disposed on the first dielectric layer; and a second dielectric layer disposed on the insertion layer and including a paraelectric material.
