17989085. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
VARIABLE RESISTANCE MEMORY DEVICE
Organization Name
Inventor(s)
Soichiro Mizusaki of Suwon-si (KR)
VARIABLE RESISTANCE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17989085 titled 'VARIABLE RESISTANCE MEMORY DEVICE
Simplified Explanation
The abstract describes a variable resistance memory device that consists of a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer is composed of two layers, with the second layer having a different density than the first layer. The first and second conductive elements are positioned on the variable resistance layer to create a current path that is perpendicular to the stacking direction of the two layers.
- The variable resistance memory device has a unique structure with two layers of different materials.
- The first layer is made of one material, while the second layer is made of a different material with a different density.
- The first and second conductive elements are placed on the variable resistance layer to form a current path.
- The current path is oriented perpendicular to the stacking direction of the two layers.
Potential applications of this technology:
- Memory devices: The variable resistance memory device can be used in various memory applications, such as non-volatile memory or random-access memory.
- Data storage: The device can be utilized for storing and retrieving data in electronic devices, such as computers, smartphones, or tablets.
Problems solved by this technology:
- Improved performance: The unique structure of the variable resistance memory device allows for enhanced performance in terms of data storage and retrieval.
- Increased density: The use of two layers with different densities enables higher data storage density, leading to more efficient memory devices.
Benefits of this technology:
- Higher data storage density: The variable resistance memory device can store more data in a smaller physical space, resulting in more efficient memory devices.
- Improved performance: The device offers improved performance in terms of data storage and retrieval, leading to faster and more reliable memory operations.
Original Abstract Submitted
A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer and a second layer. The first layer is formed of a first material. The second layer is on the first layer and formed of a second material having a density different from a density of the first material. The first conductive element and a second conductive element are located on the variable resistance layer and spaced apart from each other in order to form a current path in the variable resistance layer. The current path is in a direction perpendicular to a direction in which the first layer and the second layer are stacked.
