17983554. MAGNETIC MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
MAGNETIC MEMORY DEVICES
Organization Name
Inventor(s)
Stuart Papworth Parkin of Halle (DE)
Ung Hwan Pi of Hwaseong-si (KR)
MAGNETIC MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17983554 titled 'MAGNETIC MEMORY DEVICES
Simplified Explanation
The abstract describes a magnetic memory device that includes a magnetic track with multiple layers and a non-magnetic pattern. The layers include a lower magnetic layer, an upper magnetic layer, and a spacer layer in between. The non-magnetic pattern penetrates the upper magnetic layer and is on the spacer layer. The lower and upper magnetic layers are antiferromagnetically coupled by the spacer layer.
- The magnetic memory device includes a magnetic track with multiple layers.
- The layers consist of a lower magnetic layer, an upper magnetic layer, and a spacer layer.
- A non-magnetic pattern is present on the spacer layer and penetrates the upper magnetic layer.
- The lower and upper magnetic layers are antiferromagnetically coupled by the spacer layer.
Potential Applications:
- Magnetic storage devices such as hard drives and solid-state drives.
- Magnetic random-access memory (MRAM) technology.
- Magnetic sensors and detectors.
Problems Solved:
- Enhances the performance and efficiency of magnetic memory devices.
- Improves data storage and retrieval capabilities.
- Enables faster and more reliable magnetic memory technology.
Benefits:
- Increased data storage capacity.
- Faster data access and retrieval.
- Improved reliability and durability.
- Lower power consumption.
- Compatibility with existing magnetic memory technologies.
Original Abstract Submitted
A magnetic memory device may include a magnetic track that extends in a first direction. The magnetic track may include a lower magnetic layer that extends in the first direction, an upper magnetic layer that extends in the first direction on the lower magnetic layer, a spacer layer that extends in the first direction between the lower magnetic layer and the upper magnetic layer, and a non-magnetic pattern that penetrates the upper magnetic layer and is on the spacer layer. The non-magnetic pattern has a first junction surface that is in contact with a first portion of the upper magnetic layer, and a second junction surface that is in contact with a second portion of the upper magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.
