17972975. INTEGRATED INDUCTOR OVER TRANSISTOR LAYER simplified abstract (Intel Corporation)

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INTEGRATED INDUCTOR OVER TRANSISTOR LAYER

Organization Name

Intel Corporation

Inventor(s)

Min Suet Lim of Gelugor (MY)

Telesphor Kamgaing of Chandler AZ (US)

Chee Kheong Yoon of Beyan Lepas (MY)

Chu Aun Lim of Hillsboro OR (US)

Eng Huat Goh of Penang (MY)

Jooi Wah Wong of Bukit Mertajam (MY)

Kavitha Nagarajan of Bangalore KA (IN)

INTEGRATED INDUCTOR OVER TRANSISTOR LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17972975 titled 'INTEGRATED INDUCTOR OVER TRANSISTOR LAYER

Simplified Explanation

Integrated Circuit Devices with Integrated Inductors

The patent application describes integrated circuit devices with semiconductor devices positioned near the center of the device, integrated inductors formed over the semiconductor devices, and power delivery on the opposite side of the semiconductor devices. The integrated inductors can be used for power step-down to reduce device thickness and/or a number of power rails.

  • Semiconductor devices are located near the center of the integrated circuit device.
  • Integrated inductors are formed over the semiconductor devices.
  • Power delivery is on the opposite side of the semiconductor devices.

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      1. Potential Applications

The technology described in the patent application could be applied in:

  • Mobile devices
  • Wearable technology
  • Internet of Things (IoT) devices
      1. Problems Solved

This technology helps to:

  • Reduce device thickness
  • Optimize power delivery
  • Increase efficiency in power management
      1. Benefits

The benefits of this technology include:

  • Enhanced power management
  • Improved device performance
  • Increased design flexibility
      1. Potential Commercial Applications

The technology could be utilized in:

  • Smartphones and tablets
  • Smartwatches and fitness trackers
  • Home automation devices
      1. Possible Prior Art

One possible prior art could be the integration of inductors in semiconductor devices for power management purposes.

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        1. Unanswered Questions
        1. How does the placement of semiconductor devices near the center of the device affect overall device performance?

The patent application does not provide specific details on how the positioning of semiconductor devices impacts device performance. Further research or testing may be needed to determine the exact effects.

        1. What are the potential challenges in implementing integrated inductors over semiconductor devices?

The patent application does not address any challenges that may arise in integrating inductors over semiconductor devices. Understanding these challenges could be crucial for successful implementation of the technology.


Original Abstract Submitted

Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device, and integrated inductors formed over the semiconductor devices. Power delivery to the device is on the opposite side of the semiconductor devices. The integrated inductors may be used for power step-down to reduce device thickness and/or a number of power rails.