17972892. Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Nikhil Jain of Apple Valley MN (US)
Prabudhya Roy Chowdhury of Albany NY (US)
Kisik Choi of Watervliet NY (US)
Ruilong Xie of Niskayuna NY (US)
Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 17972892 titled 'Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device
Simplified Explanation
The semiconductor device described in the patent application consists of a channel with layers of silicon separated by a metal gate, source/drain regions adjacent to the metal gate, a frontside power rail extending through the layers of silicon, a dielectric separating the frontside power rail from the metal gate, a buried via-connect power rail coupling the frontside power rail to the source/drain regions, and a backside power rail connected to the frontside power rail. The layers of silicon are surrounded on three sides by the metal gate.
- The semiconductor device includes a channel with layers of silicon separated by a metal gate.
- Source/drain regions are located adjacent to the metal gate.
- A frontside power rail extends through the layers of silicon.
- A dielectric separates the frontside power rail from the metal gate.
- A buried via-connect power rail couples the frontside power rail to the source/drain regions.
- A backside power rail is connected to the frontside power rail.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, telecommunications, and consumer electronics.
Problems Solved
This technology addresses the challenge of improving the performance and efficiency of semiconductor devices by optimizing the power distribution and signal transmission within the device structure.
Benefits
The benefits of this technology include enhanced device performance, increased power efficiency, and improved reliability in semiconductor applications.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the development of next-generation integrated circuits, microprocessors, and other electronic components.
Possible Prior Art
One possible prior art for this technology could be the use of buried power rails in semiconductor devices to improve power distribution and signal integrity. Additionally, the integration of frontside and backside power rails in a semiconductor device structure may have been explored in previous research or patents.
Unanswered Questions
How does this technology compare to existing power distribution methods in semiconductor devices?
This article does not provide a direct comparison between this technology and other existing power distribution methods in semiconductor devices. Further research or analysis would be needed to evaluate the advantages and disadvantages of this approach compared to traditional methods.
What are the potential limitations or challenges in implementing this technology in practical semiconductor device manufacturing processes?
The article does not address the potential limitations or challenges that may arise in implementing this technology in practical semiconductor device manufacturing processes. Factors such as cost, scalability, and compatibility with existing fabrication techniques could be important considerations in the adoption of this innovation.
Original Abstract Submitted
A semiconductor device includes: a channel having layers of silicon separated from each other; a metal gate in contact with the layers of silicon; source/drain regions adjacent to the metal gate; a frontside power rail extending through the layers of silicon; a dielectric separating the frontside power rail from the metal gate; a via-connect buried power rail extending through the dielectric and coupling the frontside power rail to the source/drain regions; and a backside power rail coupled to the frontside power rail. The layers of silicon are wrapped on three sides by the metal gate.
