17972224. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)

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MEMORY DEVICE AND METHOD OF OPERATING THE SAME

Organization Name

SK hynix Inc.

Inventor(s)

Jong Kyung Park of Icheon-si Gyeonggi-do (KR)

Jae Yeop Jung of Icheon-si Gyeonggi-do (KR)

Dong Hun Kwak of Icheon-si Gyeonggi-do (KR)

MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17972224 titled 'MEMORY DEVICE AND METHOD OF OPERATING THE SAME

Simplified Explanation

The abstract describes a memory device and a method of operating it. Here is a simplified explanation of the abstract:

  • The memory device consists of multiple memory cell strings, a peripheral circuit, and an operation controller.
  • The peripheral circuit is responsible for performing read operations on selected memory cells using different read voltages.
  • The operation controller controls the peripheral circuit to perform the read operation using a first read voltage, a first potential adjustment operation, and then a second read voltage that is lower than the first read voltage.
  • The first potential adjustment operation involves applying a first turn-on voltage to unselected source select lines connected to unselected memory cell strings for a specific period and then applying a ground voltage to those unselected source select lines.

Potential applications of this technology:

  • Memory devices using this method can be used in various electronic devices such as smartphones, tablets, and computers.
  • It can be applied in data storage systems, improving the performance and efficiency of memory operations.

Problems solved by this technology:

  • The method allows for more efficient read operations by using different read voltages and a potential adjustment operation.
  • It helps to reduce power consumption and improve the overall performance of the memory device.

Benefits of this technology:

  • Improved read operation efficiency and accuracy.
  • Reduced power consumption.
  • Enhanced performance and reliability of memory devices.


Original Abstract Submitted

Provided herein may be a memory device and a method of operating the same. The memory device may include a plurality of memory cell strings, a peripheral circuit configured to, using a plurality of read voltages, perform a read operation that reads data that is stored in a selected memory cell that is included in a selected memory cell string, and an operation controller configured to control the peripheral circuit to perform the read operation by using a first read voltage, a first potential adjustment operation, and the read operation by using a second read voltage that is lower than the first read voltage, wherein the first potential adjustment operation is an operation that applies a first turn-on voltage to unselected source select lines that are coupled to unselected memory cell strings for a first period and thereafter applies a ground voltage to the unselected source select lines.

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