17971256. SEMICONDUCTOR DEVICES HAVING AIR SPACER simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES HAVING AIR SPACER
Organization Name
Inventor(s)
Hyunchul Yoon of Seongnam-si (KR)
Joonghee Kim of Anyang-si (KR)
Jungheun Hwang of Daejeon (KR)
SEMICONDUCTOR DEVICES HAVING AIR SPACER - A simplified explanation of the abstract
This abstract first appeared for US patent application 17971256 titled 'SEMICONDUCTOR DEVICES HAVING AIR SPACER
Simplified Explanation
The patent application describes a semiconductor device that includes bit line structures, buried contacts, landing pads, and insulating structures. Here is a simplified explanation of the abstract:
- The semiconductor device has bit line structures on a substrate, with each structure consisting of a bit line and an insulating spacer structure.
- Buried contacts are located in the lower portions of the spaces between the bit line structures, while landing pads fill the upper portions of the spaces.
- The landing pads extend from the upper surfaces of the buried contacts to the upper surfaces of the bit line structures, and they are separated by insulating structures.
- A first insulating structure is positioned between a first landing pad and a first bit line structure, and it includes a sidewall that extends along the sidewall of the first landing pad towards the substrate.
- The sidewall of the first insulating structure gets closer to a first sidewall of the first bit line structure as it extends towards the substrate.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Memory devices
- Integrated circuits
Problems solved by this technology:
- Provides a structure that allows for efficient connection between bit line structures and buried contacts
- Helps to reduce the risk of short circuits or other electrical issues
Benefits of this technology:
- Improved performance and reliability of semiconductor devices
- Enhanced manufacturing efficiency and yield
- Reduced risk of electrical failures or malfunctions
Original Abstract Submitted
A semiconductor device includes bit line structures disposed on a substrate, each bit line structure comprising a bit line and an insulating spacer structure, buried contacts which fill lower portions of spaces between bit line structures in the substrate, and landing pads which fill upper portions of the spaces, extend from upper surfaces of the buried contacts to upper surfaces of the bit line structures, and are spaced apart from each other by insulating structures. A first insulating structure is disposed between a first landing pad and a first bit line structure. The first insulating structure includes a sidewall extending along a sidewall of the first landing pad toward the substrate. In a direction extending toward the substrate, the sidewall of the first insulating structure gets closer to a first sidewall of the first bit line structure.
