17963555. BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM simplified abstract (Applied Materials, Inc.)
Contents
- 1 BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM
Organization Name
Inventor(s)
Sipeng Gu of Clifton Park NY (US)
Qintao Zhang of Mt Kisco NY (US)
Kyu-ha Shim of Andover MA (US)
BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM - A simplified explanation of the abstract
This abstract first appeared for US patent application 17963555 titled 'BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM
Simplified Explanation
The abstract describes a method for forming contacts in a 4F vertical dynamic random-access memory device by providing fins on a substrate, forming a spacer layer, etching the substrate to expose the fins, and forming doped layers and oxide spacers.
- Fins are provided on a substrate.
- A spacer layer is formed over the fins.
- The substrate is etched to expose the fins.
- Doped layers are formed along the base portion of the fins and the upper surface of the substrate.
- An oxide spacer is formed over the doped layer.
Potential Applications
This technology could be applied in the semiconductor industry for manufacturing 4F vertical dynamic random-access memory devices.
Problems Solved
This technology solves the problem of efficiently forming contacts in a 4F vertical dynamic random-access memory device.
Benefits
The benefits of this technology include improved performance and reliability of 4F vertical dynamic random-access memory devices.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of advanced memory devices for various electronic devices.
Possible Prior Art
One possible prior art could be the use of similar techniques for forming contacts in semiconductor devices.
Unanswered Questions
How does this method compare to existing techniques for forming contacts in 4F vertical dynamic random-access memory devices?
This article does not provide a direct comparison to existing techniques.
What are the specific performance improvements achieved by using this method?
The article does not detail the specific performance improvements achieved by using this method.
Original Abstract Submitted
Disclosed herein are approaches for forming contacts in a 4Fvertical dynamic random-access memory device. One method includes providing a plurality of fins extending from a substrate, forming a spacer layer over the plurality of fins, and etching the substrate to expose a base portion of the plurality of fins. The method may include forming a doped layer along the base portion of the plurality of fins and along an upper surface of the substrate, and forming an oxide spacer over the doped layer.
