17960979. DIELECTRIC ON DIELECTRIC SELECTIVE DEPOSITION USING ANILINE PASSIVATION simplified abstract (Applied Materials, Inc.)
Contents
- 1 DIELECTRIC ON DIELECTRIC SELECTIVE DEPOSITION USING ANILINE PASSIVATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DIELECTRIC ON DIELECTRIC SELECTIVE DEPOSITION USING ANILINE PASSIVATION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
DIELECTRIC ON DIELECTRIC SELECTIVE DEPOSITION USING ANILINE PASSIVATION
Organization Name
Inventor(s)
Keith T. Wong of Mountain View CA (US)
Srinivas D. Nemani of Saratoga CA (US)
Ellie Y. Yieh of San Jose CA (US)
Andrew C. Kummel of San Diego CA (US)
Yunil Cho of San Diego CA (US)
James Huang of San Diego CA (US)
DIELECTRIC ON DIELECTRIC SELECTIVE DEPOSITION USING ANILINE PASSIVATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17960979 titled 'DIELECTRIC ON DIELECTRIC SELECTIVE DEPOSITION USING ANILINE PASSIVATION
Simplified Explanation
The method described in the abstract involves forming a conductive material on a dielectric layer, exposing it to aniline to passivate the surface, and then depositing a second dielectric layer using a water-free and plasma-free process.
- Conductive material is formed on a first dielectric layer.
- Aniline is used to passivate the surface of the conductive material.
- A second dielectric layer is deposited on the first dielectric layer using a water-free and plasma-free process.
- The second dielectric layer does not form on the passivated surface of the conductive material.
Potential Applications
This technology could be applied in the semiconductor industry for the manufacturing of electronic devices and integrated circuits.
Problems Solved
This method helps prevent the formation of the second dielectric layer on the passivated surface of the conductive material, ensuring proper functionality of the electronic components.
Benefits
- Improved performance and reliability of electronic devices. - Enhanced control over the deposition process. - Cost-effective manufacturing process.
Potential Commercial Applications
"Water-Free and Plasma-Free Deposition Process for Dielectric Layers in Semiconductor Manufacturing"
Possible Prior Art
There may be prior art related to methods for passivating surfaces of conductive materials in semiconductor manufacturing processes.
Unanswered Questions
How does this method compare to traditional deposition processes in terms of efficiency and cost-effectiveness?
This article does not provide a direct comparison between this method and traditional deposition processes. Further research or experimentation may be needed to determine the efficiency and cost-effectiveness of this new approach.
What are the potential environmental impacts of using aniline in the passivation process?
The article does not address the environmental implications of using aniline. Additional studies may be required to assess the environmental impact of this chemical in the manufacturing process.
Original Abstract Submitted
A method includes forming a conductive material on a first dielectric layer, exposing the conductive material to aniline to produce a passivated surface of the conductive material, and after exposing the conductive material to aniline, forming a second dielectric layer on the first dielectric layer using a deposition process. The deposition process is a water-free and plasma-free deposition process, and the second dielectric layer does not form on the passivated surface of the conductive material.
