View source for 17960871. STACKED CLIP DESIGN FOR GaN HALF BRIDGE IPM simplified abstract (Texas Instruments Incorporated)

=STACKED CLIP DESIGN FOR GaN HALF BRIDGE IPM=


==Organization Name==

[[:Category:Texas Instruments Incorporated|Texas Instruments Incorporated]]


[[Category:Texas Instruments Incorporated]]

==Inventor(s)==

[[:Category:Kwang-Soo Kim of Sunnyvale CA (US)|Kwang-Soo Kim of Sunnyvale CA (US)]][[Category:Kwang-Soo Kim of Sunnyvale CA (US)]]

[[:Category:Makoto Shibuya of Tokyo (JP)|Makoto Shibuya of Tokyo (JP)]][[Category:Makoto Shibuya of Tokyo (JP)]]

[[:Category:Woochan Kim of San Jose CA (US)|Woochan Kim of San Jose CA (US)]][[Category:Woochan Kim of San Jose CA (US)]]

[[:Category:Vivek Arora of San Jose CA (US)|Vivek Arora of San Jose CA (US)]][[Category:Vivek Arora of San Jose CA (US)]]

==STACKED CLIP DESIGN FOR GaN HALF BRIDGE IPM - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17960871 titled 'STACKED CLIP DESIGN FOR GaN HALF BRIDGE IPM

==Simplified Explanation==

The electronic device described in the patent application includes a semiconductor die with a transistor, first and second metal clips connecting the transistor to conductive traces on the substrate, and the second metal clip partially overlying the first metal clip.

* The electronic device includes a substrate with conductive traces, a semiconductor die with a transistor, and metal clips connecting the transistor to the traces.
* The first metal clip connects the first terminal of the transistor to the first conductive trace on the substrate.
* The second metal clip connects the second terminal of the transistor to the second conductive trace on the substrate, with a portion overlying the first metal clip.

== Potential Applications ==
This technology could be applied in various electronic devices such as smartphones, tablets, and computers to improve the connection between the semiconductor die and the substrate.

== Problems Solved ==
This technology solves the problem of ensuring a secure and reliable connection between the transistor on the semiconductor die and the conductive traces on the substrate in electronic devices.

== Benefits ==
The benefits of this technology include improved performance, reliability, and longevity of electronic devices by providing a stable connection between the semiconductor die and the substrate.

== Potential Commercial Applications ==
The potential commercial applications of this technology include the manufacturing of consumer electronics, industrial equipment, and automotive electronics with enhanced connectivity and performance.

== Possible Prior Art ==
One possible prior art for this technology could be the use of wire bonding or flip-chip bonding techniques to connect semiconductor dies to substrates in electronic devices.

=== Unanswered Questions ===

== How does this technology compare to traditional wire bonding methods for connecting semiconductor dies to substrates in electronic devices? ==
This article does not provide a direct comparison between this technology and traditional wire bonding methods, leaving the reader to wonder about the specific advantages and disadvantages of each approach.

== What are the specific design considerations for implementing this technology in different types of electronic devices? ==
The article does not delve into the specific design considerations that need to be taken into account when implementing this technology in various electronic devices, leaving the reader curious about the customization and adaptability of the technology.


==Original Abstract Submitted==

An electronic device includes a substrate having first and second conductive traces, a semiconductor die having a transistor with a first terminal and a second terminal, and first and second metal clips. The first metal clip has a first end portion coupled to the first terminal of the transistor, and a second end portion coupled to the first conductive trace of the substrate. The second metal clip has a first end portion coupled to the second terminal of the transistor and a second end portion coupled to the second conductive trace of the substrate, and a middle portion of the second metal clip is spaced apart from and at least partially overlying a portion of the first metal clip.



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