View source for 17960569. CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL simplified abstract (Applied Materials, Inc.)

=CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Shankar Venkataraman of San Jose CA (US)|Shankar Venkataraman of San Jose CA (US)]][[Category:Shankar Venkataraman of San Jose CA (US)]]

[[:Category:Zeqing Shen of San Jose CA (US)|Zeqing Shen of San Jose CA (US)]][[Category:Zeqing Shen of San Jose CA (US)]]

[[:Category:Susmit Singha Roy of Campbell CA (US)|Susmit Singha Roy of Campbell CA (US)]][[Category:Susmit Singha Roy of Campbell CA (US)]]

[[:Category:Abhijit Basu Mallick of Fremont CA (US)|Abhijit Basu Mallick of Fremont CA (US)]][[Category:Abhijit Basu Mallick of Fremont CA (US)]]

[[:Category:Lakmal C. Kalutarage of San Jose CA (US)|Lakmal C. Kalutarage of San Jose CA (US)]][[Category:Lakmal C. Kalutarage of San Jose CA (US)]]

[[:Category:Jongbeom Seo of San Jose CA (US)|Jongbeom Seo of San Jose CA (US)]][[Category:Jongbeom Seo of San Jose CA (US)]]

[[:Category:Sai Hooi Yeong of Cupertino CA (US)|Sai Hooi Yeong of Cupertino CA (US)]][[Category:Sai Hooi Yeong of Cupertino CA (US)]]

[[:Category:Benjamin Colombeau of San Jose CA (US)|Benjamin Colombeau of San Jose CA (US)]][[Category:Benjamin Colombeau of San Jose CA (US)]]

[[:Category:Balasubramanian Pranatharthiharan of San Jose CA (US)|Balasubramanian Pranatharthiharan of San Jose CA (US)]][[Category:Balasubramanian Pranatharthiharan of San Jose CA (US)]]

==CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17960569 titled 'CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL

==Simplified Explanation==

The abstract describes a method of semiconductor processing involving etching a silicon-containing material from a substrate in a processing chamber, replenishing carbon in the material, and removing surface oxide from the substrate.

* Etching of silicon-containing material from a substrate in a semiconductor processing chamber
* Replenishing carbon in the silicon-containing material using a carbon-containing precursor
* Removing surface oxide from the substrate using a cleaning agent

== Potential Applications ==
This technology could be applied in the semiconductor industry for the fabrication of advanced electronic devices.

== Problems Solved ==
This technology helps in improving the quality and performance of semiconductor devices by ensuring proper etching and cleaning processes.

== Benefits ==
The benefits of this technology include enhanced device performance, increased reliability, and improved manufacturing efficiency.

== Potential Commercial Applications ==
One potential commercial application of this technology could be in the production of high-performance integrated circuits for various electronic devices.

== Possible Prior Art ==
Prior art in semiconductor processing includes various methods for etching and cleaning substrates, but this specific combination of etching, carbon replenishment, and oxide removal may be novel.

=== Unanswered Questions ===

=== How does this technology compare to existing methods in terms of cost-effectiveness? ===
This article does not provide information on the cost-effectiveness of this technology compared to existing methods. Further research and analysis would be needed to determine this aspect.

=== What are the environmental implications of using carbon-containing precursors in semiconductor processing? ===
The article does not address the environmental implications of using carbon-containing precursors. It would be important to investigate the potential impact on the environment and explore ways to mitigate any negative effects.


==Original Abstract Submitted==

Exemplary methods of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. The silicon-containing material may extend into one or more recesses defined by alternating layers of material deposited on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting a remaining silicon-containing material with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the silicon-containing material. The methods may include providing a cleaning agent to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the cleaning agent. The contacting with the cleaning precursor may remove surface oxide from the substrate.



[[Category:H01L21/02]]
[[Category:H01L21/311]]
[[Category:H01L29/66]]