17960346. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Yonghyuk Choi of Suwon-si (KR)

Yohan Lee of Incheon (KR)

NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17960346 titled 'NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

Simplified Explanation

The abstract describes an operating method for a non-volatile memory device that consists of multiple cell strings. The method involves performing a program operation by applying different voltage levels to select and non-select word lines connected to the cell strings.

  • The method includes performing a first program operation during a time period with multiple program loops.
  • A program voltage with a first set of voltage levels is applied to the select word line connected to the first stack of each cell string.
  • Second voltages with a second set of voltage levels are applied to the non-select word line connected to the first stack of each cell string.
  • A third voltage at a first level is maintained on the non-select word line connected to the second stack of each cell string.

Potential applications of this technology:

  • Non-volatile memory devices, such as flash memory, can benefit from this operating method.
  • The method can be used in various electronic devices that require non-volatile memory, such as smartphones, tablets, and solid-state drives.

Problems solved by this technology:

  • The operating method allows for efficient programming of non-volatile memory devices.
  • It ensures that the correct voltage levels are applied to the different components of the cell strings, improving the reliability and performance of the memory device.

Benefits of this technology:

  • The method enables faster and more reliable programming of non-volatile memory.
  • It helps to reduce power consumption during the programming operation.
  • The operating method can be implemented in existing non-volatile memory devices without significant modifications.


Original Abstract Submitted

An operating method of a non-volatile memory device that includes a plurality of cell strings each including a first stack and a second stack adjacent to the first stack, the operating method include performing a first program operation during a time period in which a plurality of program loops are performed, by applying a program voltage including a first plurality of voltage levels to a select word line connected to the first stack of each of the plurality of cell strings, applying, during the time period, second voltages including a second plurality of voltage levels to a non-select word line connected to the first stack of each of the plurality of cell strings, and maintaining, during the time period, a third voltage at a first level, the third voltage applied to a non-select word line connected to the second stack of each of the plurality of cell strings.

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