17958395. INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS simplified abstract (Intel Corporation)
Contents
- 1 INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
Organization Name
Inventor(s)
Nazila Haratipour of Portland OR (US)
Uygar E. Avci of Portland OR (US)
Vachan Kumar of Hillsboro OR (US)
Yu-Ching Liao of Portland OR (US)
Ian Alexander Young of Olympia WA (US)
INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17958395 titled 'INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
Simplified Explanation
The abstract describes inverted pillar capacitors with a U-shaped insulating layer, oriented with the U-shaped opening towards the substrate surface. The bottom electrodes of adjacent capacitors are isolated by the insulating layers and top electrodes. This design allows for higher capacitor density and can be used in memory circuits or non-memory applications.
- Inverted pillar capacitors have a U-shaped insulating layer.
- The U-shaped opening of the insulating layer faces the substrate surface.
- Bottom electrodes of adjacent capacitors are isolated by insulating layers and top electrodes.
- Higher capacitor density is achieved compared to non-inverted pillar capacitors.
- Can be used in memory circuits (e.g., DRAMs) or non-memory applications.
Potential Applications
The technology can be applied in memory circuits such as DRAMs, as well as in non-memory applications where high capacitor density is required.
Problems Solved
The design of inverted pillar capacitors solves the issue of isolating adjacent bottom electrodes by using insulating layers and top electrodes, allowing for a higher capacitor density.
Benefits
- Increased capacitor density - Versatile applications in memory and non-memory circuits - Efficient use of space on the substrate
Potential Commercial Applications
"High-Density Inverted Pillar Capacitors for Memory Circuits and Beyond"
Possible Prior Art
There may be prior art related to capacitor designs and memory circuit technologies that address similar issues of capacitor density and isolation of electrodes.
Unanswered Questions
1. What specific materials are commonly used for the insulating layer in inverted pillar capacitors? 2. Are there any limitations or drawbacks to using inverted pillar capacitors in certain applications?
Original Abstract Submitted
Inverted pillar capacitors that have a U-shaped insulating layer are oriented with the U-shaped opening of the insulating layer opening toward the surface of the substrate on which the inverted pillar capacitors are formed. The bottom electrodes of adjacent inverted pillar capacitors are isolated from each other by the insulating layers of the adjacent electrodes and the top electrode that fills the volume between the electrodes. By avoiding the need to isolate adjacent bottom electrodes by an isolation dielectric region, inverted pillar capacitors can provide for a greater capacitor density relative to non-inverted pillar capacitors. The insulating layer in inverted pillar capacitors can comprise a ferroelectric material or an antiferroelectric material. The inverted pillar capacitor can be used in memory circuits (e.g., DRAMs) or non-memory applications.
