17958279. GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM simplified abstract (Intel Corporation)
Contents
- 1 GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this memory device compare to existing non-volatile memory technologies in terms of speed and reliability?
- 1.11 What are the potential challenges in scaling up the production of memory devices using this technology for mass commercial use?
- 1.12 Original Abstract Submitted
GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM
Organization Name
Inventor(s)
Shriram Shivaraman of Hillsboro OR (US)
Sou-Chi Chang of Portland OR (US)
Sourav Dutta of Hillsboro OR (US)
Uygar E. Avci of Portland OR (US)
GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM - A simplified explanation of the abstract
This abstract first appeared for US patent application 17958279 titled 'GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM
Simplified Explanation
The patent application abstract describes a memory device with a first transistor for writing data, a ferroelectric capacitor for storing data, and a second transistor for reading the stored data.
- The memory device includes an access transistor for writing data.
- The memory device features a ferroelectric capacitor for data storage.
- The memory device incorporates a sense transistor for reading the stored data.
Potential Applications
The technology described in this patent application could be applied in:
- Non-volatile memory systems
- Embedded systems
- IoT devices
Problems Solved
This technology helps address the following issues:
- Data retention in memory devices
- Efficient data reading and writing processes
Benefits
The benefits of this technology include:
- Faster data access speeds
- Enhanced data security
- Lower power consumption
Potential Commercial Applications
The potential commercial applications of this technology could include:
- Memory chips for consumer electronics
- Data storage devices for industrial applications
- Memory modules for computing systems
Possible Prior Art
One example of prior art in this field is the use of ferroelectric capacitors in memory devices for data storage.
Unanswered Questions
How does this memory device compare to existing non-volatile memory technologies in terms of speed and reliability?
The speed and reliability comparison of this memory device with existing non-volatile memory technologies is not addressed in the abstract.
What are the potential challenges in scaling up the production of memory devices using this technology for mass commercial use?
The abstract does not provide information on the potential challenges in scaling up production for mass commercial use.
Original Abstract Submitted
Embodiments disclosed herein include a memory device. In an embodiment, the memory device comprises a first transistor, where the first transistor is an access transistor to write data. In an embodiment, the memory device further comprises a ferroelectric capacitor for storing data. In an embodiment, the memory device further comprises a second transistor, where the second transistor is a sense transistor to read the data stored on the ferroelectric capacitor.
