View source for 17957560. HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS simplified abstract (Intel Corporation)

=HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Sou-Chi Chang of Portland OR (US)|Sou-Chi Chang of Portland OR (US)]][[Category:Sou-Chi Chang of Portland OR (US)]]

[[:Category:Nazila Haratipour of Portland OR (US)|Nazila Haratipour of Portland OR (US)]][[Category:Nazila Haratipour of Portland OR (US)]]

[[:Category:Christopher Neumann of Portland OR (US)|Christopher Neumann of Portland OR (US)]][[Category:Christopher Neumann of Portland OR (US)]]

[[:Category:Shriram Shivaraman of Hillsboro OR (US)|Shriram Shivaraman of Hillsboro OR (US)]][[Category:Shriram Shivaraman of Hillsboro OR (US)]]

[[:Category:Brian Doyle of Portland OR (US)|Brian Doyle of Portland OR (US)]][[Category:Brian Doyle of Portland OR (US)]]

[[:Category:Sarah Atanasov of Beaverton OR (US)|Sarah Atanasov of Beaverton OR (US)]][[Category:Sarah Atanasov of Beaverton OR (US)]]

[[:Category:Bernal Granados Alpizar of Beaverton OR (US)|Bernal Granados Alpizar of Beaverton OR (US)]][[Category:Bernal Granados Alpizar of Beaverton OR (US)]]

[[:Category:Uygar Avci of Portland OR (US)|Uygar Avci of Portland OR (US)]][[Category:Uygar Avci of Portland OR (US)]]

==HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17957560 titled 'HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS

==Simplified Explanation==

The patent application describes apparatuses, memory systems, capacitor structures, and techniques related to anti-ferroelectric capacitors with a cerium oxide doped hafnium zirconium oxide based anti-ferroelectric.

* A capacitor includes layers of hafnium oxide, cerium oxide, and zirconium oxide between metal electrodes.
* The cerium in the cerium oxide provides a mid-gap state to protect the hafnium zirconium oxide during operation.

== Potential Applications ==
This technology could be applied in:
* Memory systems
* High-performance computing
* Aerospace and defense industries

== Problems Solved ==
This technology addresses issues such as:
* Capacitor degradation
* Data loss in memory systems
* Performance limitations in electronic devices

== Benefits ==
The benefits of this technology include:
* Improved capacitor stability
* Enhanced memory system reliability
* Increased performance in electronic devices

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Semiconductor manufacturing
* Electronics industry
* Research and development for advanced materials

== Possible Prior Art ==
One possible prior art could be the use of different dopants in ferroelectric materials to enhance their properties.

=== Unanswered Questions ===

=== How does this technology compare to existing anti-ferroelectric capacitor designs? ===
This article does not provide a direct comparison with existing anti-ferroelectric capacitor designs. It would be helpful to know the specific advantages and disadvantages of this new technology compared to current solutions.

=== What are the long-term reliability and durability implications of using cerium oxide doped hafnium zirconium oxide in capacitors? ===
The article does not address the long-term reliability and durability implications of using cerium oxide doped hafnium zirconium oxide in capacitors. Understanding how this technology performs over time and under various conditions is crucial for its practical application.


==Original Abstract Submitted==

Apparatuses, memory systems, capacitor structures, and techniques related to anti-ferroelectric capacitors having a cerium oxide doped hafnium zirconium oxide based anti-ferroelectric are described. A capacitor includes layers of hafnium oxide, cerium oxide, and zirconium oxide between metal electrodes. The cerium of the cerium oxide provides a mid gap state to protect the hafnium zirconium oxide during operation.



[[Category:H01L27/11507]]