17954482. METHODS OF FABRICATING A CAPACITOR AND SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
METHODS OF FABRICATING A CAPACITOR AND SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Cheoljin Cho of Hwaseong-si (KR)
Hyunjun Kim of Gwacheon-si (KR)
METHODS OF FABRICATING A CAPACITOR AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17954482 titled 'METHODS OF FABRICATING A CAPACITOR AND SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for fabricating a capacitor on a semiconductor substrate. The method involves several steps including forming a lower electrode, a homogeneous oxide layer, a dielectric layer, and an upper electrode. The formation of the homogeneous oxide layer is done through a specific cycle involving supplying an oxidizing agent, purging it, and pumping out the reaction space.
- The method involves fabricating a capacitor on a semiconductor substrate.
- A lower electrode is formed on the substrate.
- A homogeneous oxide layer is formed on the lower electrode.
- A dielectric layer is formed on the homogeneous oxide layer.
- An upper electrode is formed on the dielectric layer.
- The formation of the homogeneous oxide layer involves a specific cycle.
- The cycle includes supplying an oxidizing agent, purging it, and pumping out the reaction space.
Potential Applications
- Fabrication of capacitors on semiconductor substrates.
- Integration of capacitors into electronic devices.
- Use in memory devices, integrated circuits, and other electronic components.
Problems Solved
- Provides a method for fabricating capacitors with improved performance and reliability.
- Enables the formation of a homogeneous oxide layer, which is important for the capacitor's functionality.
- Offers a controlled and repeatable process for capacitor fabrication.
Benefits
- Improved performance and reliability of capacitors.
- Enhanced functionality due to the formation of a homogeneous oxide layer.
- Controlled and repeatable process for capacitor fabrication.
Original Abstract Submitted
A method of fabricating a capacitor includes forming a lower electrode on a semiconductor substrate in a reaction space. A homogeneous oxide layer is formed on the lower electrode. A dielectric layer is formed on the homogeneous oxide layer. An upper electrode is formed on the dielectric layer. The forming of the homogeneous oxide layer includes performing a homogeneous oxide layer forming cycle at least one time. The homogeneous oxide layer forming cycle includes supplying an oxidizing agent, purging the oxidizing agent, and pumping-out the reaction space.
