17952637. SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS FOR THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS FOR THE SAME
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
Jongman Park of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS FOR THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17952637 titled 'SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS FOR THE SAME
Simplified Explanation
The patent application describes a semiconductor device with multiple gate electrodes on a substrate, each having vertical extension sidewalls. It includes a channel layer on the first vertical extension sidewall of each gate electrode, along with a ferroelectric layer and a gate insulating layer. An insulating layer is present on the second vertical extension sidewall of each gate electrode. Additionally, there are multiple bit lines connected to the channel layer and extending in a different horizontal direction.
- The semiconductor device has gate electrodes with vertical extension sidewalls, allowing for efficient use of space on the substrate.
- The channel layer on the first vertical extension sidewall of each gate electrode helps in controlling the flow of current.
- The presence of a ferroelectric layer and a gate insulating layer enhances the performance of the device.
- The insulating layer on the second vertical extension sidewall of each gate electrode provides isolation and prevents interference.
- The multiple bit lines connected to the channel layer enable data transfer in a different horizontal direction.
Potential Applications
This technology can be applied in various fields, including:
- Integrated circuits
- Memory devices
- Microprocessors
- Digital logic circuits
Problems Solved
The semiconductor device described in the patent application addresses the following problems:
- Efficient utilization of space on the substrate
- Enhanced control of current flow
- Isolation and prevention of interference
- Efficient data transfer in different directions
Benefits
The benefits of this technology include:
- Improved performance and functionality of semiconductor devices
- Increased data transfer efficiency
- Space-saving design on the substrate
- Enhanced control and isolation of current flow
Original Abstract Submitted
A semiconductor device includes a plurality of gate electrodes extending on a substrate in a first horizontal direction and each including first and second vertical extension sidewalls that are opposite to each other, a channel arranged on the first vertical extension sidewall of each gate electrode and including a vertical extension portion, a ferroelectric layer and a gate insulating layer that are sequentially located between the channel layer and the first vertical extension sidewall of each gate electrode, an insulating layer on the second vertical extension sidewall of each gate electrode, and a plurality of bit lines electrically connected to the channel layer and extending in a second horizontal direction that is different from the first horizontal direction.
