17948990. Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material simplified abstract (International Business Machines Corporation)
Contents
- 1 Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the carbon and oxygen-containing passivation layer improve the performance of phase change memory devices?
- 1.11 What are the potential challenges in implementing these techniques on an industrial scale?
- 1.12 Original Abstract Submitted
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material
Organization Name
International Business Machines Corporation
Inventor(s)
Luxherta Buzi of Chappaqua NY (US)
Robert L. Bruce of White Plains NY (US)
John M. Papalia of New York NY (US)
Lynne Marie Gignac of Beacon NY (US)
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material - A simplified explanation of the abstract
This abstract first appeared for US patent application 17948990 titled 'Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material
Simplified Explanation
The patent application describes techniques for sidewall passivation and removal of redeposited materials and processing damage from phase change memory materials.
- Phase change memory device with carbon and oxygen-containing passivation layer on sidewalls of phase change material
- Ovonic threshold switch present between bottom and top electrodes, with passivation layer on its sidewalls
- Method of fabricating phase change memory devices provided
Potential Applications
The technology described in the patent application could be applied in the development of more efficient and reliable phase change memory devices for various electronic applications.
Problems Solved
The innovation addresses issues related to sidewall passivation, redeposited materials, and processing damage in phase change memory materials, leading to improved performance and longevity of the devices.
Benefits
The benefits of this technology include enhanced stability, reduced processing damage, and increased efficiency in phase change memory devices.
Potential Commercial Applications
The technology could have potential commercial applications in the semiconductor industry for the production of advanced phase change memory devices.
Possible Prior Art
One possible prior art in this field is the use of various passivation techniques to improve the performance of memory devices.
Unanswered Questions
How does the carbon and oxygen-containing passivation layer improve the performance of phase change memory devices?
The patent application describes the presence of a carbon and oxygen-containing passivation layer on the sidewalls of the phase change material. However, it does not delve into the specific mechanisms through which this passivation layer enhances the performance of the devices.
What are the potential challenges in implementing these techniques on an industrial scale?
While the patent application provides a method of fabricating the described phase change memory devices, it does not address the potential challenges that may arise when scaling up production for commercial applications.
Original Abstract Submitted
Techniques for sidewall passivation and removal of redeposited materials and processing damage from phase change memory materials are provided. In one aspect, a phase change memory device includes: one or more phase change memory cells, where each of the phase change memory cells includes a phase change material between a bottom electrode and a top electrode; and a carbon and oxygen-containing passivation layer on sidewalls of the phase change material. An ovonic threshold switch can also be present between the bottom and top electrodes, in series with the phase change material, and the carbon and oxygen-containing passivation layer can also be present on sidewalls of the ovonic threshold switch. A method of fabricating the present phase change memory devices is also provided.
