17948951. Boron Surface Passivation of Phase Change Memory Material simplified abstract (International Business Machines Corporation)
Contents
- 1 Boron Surface Passivation of Phase Change Memory Material
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Boron Surface Passivation of Phase Change Memory Material - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the boron surface passivation affect the overall power consumption of the phase change memory device?
- 1.11 Are there any potential drawbacks or limitations to using boron surface passivation in phase change memory devices?
- 1.12 Original Abstract Submitted
Boron Surface Passivation of Phase Change Memory Material
Organization Name
International Business Machines Corporation
Inventor(s)
Luxherta Buzi of Chappaqua NY (US)
ROBERT L. Bruce of White Plains NY (US)
Charlie Tabachnick of Astoria NY (US)
Marinus Johannes Petrus Hopstaken of Carmel NY (US)
Boron Surface Passivation of Phase Change Memory Material - A simplified explanation of the abstract
This abstract first appeared for US patent application 17948951 titled 'Boron Surface Passivation of Phase Change Memory Material
Simplified Explanation
The patent application discusses techniques for improving the switching properties of phase change memory devices by using boron surface passivation of the phase change memory material. This involves implementing a boron-containing and nitrogen-containing bilayer on the sidewalls of the phase change material to protect it from exposure to oxygen. An ovonic threshold switch can be included between the electrodes and the phase change material to enhance performance.
- Boron surface passivation of phase change memory material
- Implementation of boron-containing and nitrogen-containing bilayer on sidewalls
- Protection of phase change material from exposure to oxygen
- Inclusion of ovonic threshold switch for improved performance
Potential Applications
The technology can be applied in various electronic devices such as smartphones, computers, and data storage systems.
Problems Solved
1. Enhanced switching properties of phase change memory devices 2. Protection of phase change material from oxygen exposure
Benefits
1. Improved performance and reliability of phase change memory devices 2. Extended lifespan of the memory material 3. Enhanced data storage capabilities
Potential Commercial Applications
Optimizing data storage systems with faster and more reliable memory devices.
Possible Prior Art
Prior research may have explored different methods of passivating phase change memory materials, but the specific use of boron surface passivation as described in this patent application may be novel.
Unanswered Questions
How does the boron surface passivation affect the overall power consumption of the phase change memory device?
The patent application does not provide specific details on the impact of boron surface passivation on power consumption. Further research or experimentation may be needed to determine this aspect.
Are there any potential drawbacks or limitations to using boron surface passivation in phase change memory devices?
The patent application does not address any potential drawbacks or limitations of using boron surface passivation. Additional studies or testing may be necessary to identify any such issues.
Original Abstract Submitted
Techniques for improving switching properties of phase change memory devices by boron surface passivation of the phase change memory material are provided. In one aspect, a phase change memory device includes: one or more phase change memory cells, each having a phase change material between a bottom electrode and a top electrode; and a boron-containing and nitrogen-containing bilayer on sidewalls of the phase change material to protect the phase change material from exposure to oxygen. An ovonic threshold switch can be implemented between the bottom electrode and the top electrode, in series with the phase change material. A method of fabricating the present phase change memory devices is also provided.
