17946821. SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)

SELF-ALIGNED BACKSIDE CONTACT

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of ALBANY NY (US)

Min Gyu Sung of Latham NY (US)

Chanro Park of Clifton Park NY (US)

Juntao Li of Cohoes NY (US)

SELF-ALIGNED BACKSIDE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17946821 titled 'SELF-ALIGNED BACKSIDE CONTACT

Simplified Explanation

The CMOS apparatus described in the patent application includes a semiconductor substrate with a frontside and a backside, a source/drain structure at the frontside, a backside interconnect layer, a backside contact connecting the source/drain structure to the interconnect layer, and a sigma-profiled dielectric structure insulating the backside contact from the substrate.

• The semiconductor substrate has a frontside and a backside.
• The source/drain structure is located at the frontside of the substrate.
• The backside interconnect layer is positioned at the backside of the substrate.
• The backside contact penetrates the substrate to connect the source/drain structure to the interconnect layer.
• The sigma-profiled dielectric structure insulates the backside contact from the substrate.

Potential Applications

This technology could be applied in:

• Semiconductor manufacturing
• Integrated circuit design
• Electronic device production

Problems Solved

This technology helps address issues related to:

• Electrical connectivity in semiconductor devices
• Insulation and protection of components
• Miniaturization of electronic devices

Benefits

The benefits of this technology include:

• Improved performance of CMOS devices
• Enhanced reliability and durability
• Simplified manufacturing processes

Potential Commercial Applications

• Consumer electronics
• Automotive electronics
• Telecommunications equipment

Possible Prior Art

One possible prior art could be the use of backside contacts in semiconductor devices to improve electrical connectivity and performance.

Unanswered Questions

How does the sigma-profiled dielectric structure impact the overall efficiency of the CMOS apparatus?

The sigma-profiled dielectric structure is mentioned in the abstract, but its specific role and impact on the device's performance are not elaborated on. Further details on this aspect would be beneficial for a comprehensive understanding of the technology.

What are the specific manufacturing challenges associated with implementing this CMOS apparatus in large-scale production?

While the benefits and applications of the technology are highlighted, the potential hurdles or complexities in mass production are not discussed. Understanding the manufacturing challenges could provide insights into the scalability and cost-effectiveness of the innovation.

Original Abstract Submitted

A CMOS apparatus includes a semiconductor substrate that has a frontside and a backside opposite the frontside; a source/drain structure, which is disposed at the frontside of the substrate and has a backside that is adjacent to the substrate and a frontside that is opposite the backside of the source/drain structure; a backside interconnect layer, which is disposed at the backside of the substrate; a backside contact, which penetrates the substrate and electrically connects the source/drain structure to the backside interconnect layer; and a sigma-profiled dielectric structure that insulates first and second sides of the backside contact from the substrate.