17944213. Vertical emitters with integrated final-stage transistor switch simplified abstract (Apple Inc.)
Contents
- 1 Vertical emitters with integrated final-stage transistor switch
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Vertical emitters with integrated final-stage transistor switch - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Original Abstract Submitted
Vertical emitters with integrated final-stage transistor switch
Organization Name
Inventor(s)
Siddharth Joshi of Grenoble (FR)
Keith Lyon of San Jose CA (US)
[[:Category:Arnaud Laflaqui�re of Paris (FR)|Arnaud Laflaqui�re of Paris (FR)]][[Category:Arnaud Laflaqui�re of Paris (FR)]]
Christophe Verove of Le Cheylas (FR)
Vertical emitters with integrated final-stage transistor switch - A simplified explanation of the abstract
This abstract first appeared for US patent application 17944213 titled 'Vertical emitters with integrated final-stage transistor switch
Simplified Explanation
The integrated emitter device described in the patent application includes a silicon die with control circuits and multiple integrated emitter modules, each containing a vertical emitter with III-V semiconductor compounds, distributed Bragg reflectors, and a transistor for activation.
- Silicon die with control circuits
- Integrated emitter modules with vertical emitters
- III-V semiconductor compounds in epitaxial stack
- Distributed Bragg reflectors for optical activity
- Transistor for actuation by control circuits
Potential Applications
The technology could be used in:
- Solid-state lighting
- Optical communication
- Laser projection systems
Problems Solved
The integrated emitter device addresses issues such as:
- Efficient light emission
- Precise control of optical output
- Integration of multiple emitters on a single die
Benefits
The benefits of this technology include:
- High brightness and efficiency
- Compact and integrated design
- Precise control and modulation of light output
Potential Commercial Applications
- "Integrated Emitter Device for Solid-State Lighting and Optical Communication
Original Abstract Submitted
An integrated emitter device incudes a silicon die, including an array of control circuits, and a plurality of integrated emitter modules disposed on the silicon die. Each integrated emitter module includes a single epitaxial stack comprising multiple layers of III-V semiconductor compounds, which define a vertical emitter including an optically active layer and upper and lower distributed Bragg reflectors (DBRs) on opposing sides of the optically active layer, and a transistor in series with the vertical emitter and including a terminal in contact with a respective one of the control circuits, so as to actuate the vertical emitter in response to a control signal applied to the terminal by the respective one of the control circuits.