17944213. Vertical emitters with integrated final-stage transistor switch simplified abstract (Apple Inc.)

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Vertical emitters with integrated final-stage transistor switch

Organization Name

Apple Inc.

Inventor(s)

Siddharth Joshi of Grenoble (FR)

Keith Lyon of San Jose CA (US)

[[:Category:Arnaud Laflaqui�re of Paris (FR)|Arnaud Laflaqui�re of Paris (FR)]][[Category:Arnaud Laflaqui�re of Paris (FR)]]

Christophe Verove of Le Cheylas (FR)

Vertical emitters with integrated final-stage transistor switch - A simplified explanation of the abstract

This abstract first appeared for US patent application 17944213 titled 'Vertical emitters with integrated final-stage transistor switch

Simplified Explanation

The integrated emitter device described in the patent application includes a silicon die with control circuits and multiple integrated emitter modules, each containing a vertical emitter with III-V semiconductor compounds, distributed Bragg reflectors, and a transistor for activation.

  • Silicon die with control circuits
  • Integrated emitter modules with vertical emitters
  • III-V semiconductor compounds in epitaxial stack
  • Distributed Bragg reflectors for optical activity
  • Transistor for actuation by control circuits

Potential Applications

The technology could be used in:

  • Solid-state lighting
  • Optical communication
  • Laser projection systems

Problems Solved

The integrated emitter device addresses issues such as:

  • Efficient light emission
  • Precise control of optical output
  • Integration of multiple emitters on a single die

Benefits

The benefits of this technology include:

  • High brightness and efficiency
  • Compact and integrated design
  • Precise control and modulation of light output

Potential Commercial Applications

  • "Integrated Emitter Device for Solid-State Lighting and Optical Communication


Original Abstract Submitted

An integrated emitter device incudes a silicon die, including an array of control circuits, and a plurality of integrated emitter modules disposed on the silicon die. Each integrated emitter module includes a single epitaxial stack comprising multiple layers of III-V semiconductor compounds, which define a vertical emitter including an optically active layer and upper and lower distributed Bragg reflectors (DBRs) on opposing sides of the optically active layer, and a transistor in series with the vertical emitter and including a terminal in contact with a respective one of the control circuits, so as to actuate the vertical emitter in response to a control signal applied to the terminal by the respective one of the control circuits.