17940403. CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD USING THE SAME
Organization Name
Inventor(s)
Chaelyoung Kim of Hwaseong-si (KR)
Jinyoung Park of Suwon-si (KR)
Jaehyug Lee of Hwaseong-si (KR)
Hoyoung Kim of Seongnam-si (KR)
CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17940403 titled 'CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD USING THE SAME
Simplified Explanation
The abstract describes a chemical mechanical polishing apparatus that includes a platen with a polishing pad, a slurry supply unit, an electrode, a power supply unit, and a polishing head. The apparatus is used for polishing semiconductor substrates.
- The platen is attached with a polishing pad and rotates in one direction using a driving means.
- The slurry supply unit provides a slurry containing an abrasive and an additive with a specific zeta potential to the polishing pad.
- An electrode is positioned below the polishing pad.
- The power supply unit applies a voltage, including a DC pulse with a polarity opposite to the additive's zeta potential, to the electrode.
- The polishing head is installed on the polishing pad and rotates the semiconductor substrate in contact with the polishing pad.
Potential Applications
- Semiconductor manufacturing: The apparatus can be used in the production of semiconductor devices, where polishing is required for surface planarization.
- Integrated circuit fabrication: The technology can be applied in the manufacturing process of integrated circuits to achieve precise polishing of semiconductor substrates.
Problems Solved
- Efficient polishing: The apparatus combines chemical and mechanical polishing techniques to achieve a high level of surface planarity on semiconductor substrates.
- Uniform polishing: The slurry supply unit ensures a consistent supply of slurry with the desired zeta potential, resulting in uniform polishing across the substrate.
- Enhanced control: The application of a voltage pulse with a specific polarity helps control the polishing process and improve the overall quality of the polished surface.
Benefits
- Improved surface quality: The combination of chemical and mechanical polishing techniques results in a highly smooth and planar surface on the semiconductor substrate.
- Enhanced productivity: The apparatus enables efficient and uniform polishing, reducing the time and effort required for surface planarization.
- Precise control: The application of a voltage pulse allows for better control over the polishing process, leading to improved accuracy and reproducibility.
Original Abstract Submitted
A chemical mechanical polishing apparatus, includes: a platen having a polishing pad attached to an upper surface thereof, and rotatably installed in one direction by a driving means, a slurry supply unit supplying a slurry including an abrasive and an additive having a zeta potential of a first polarity to the polishing pad, an electrode disposed below the polishing pad, a power supply unit applying a voltage including a DC pulse of a second polarity, opposite to the first polarity, to the electrode, and a polishing head installed on the polishing pad, and rotating a semiconductor substrate in contact with the polishing pad.
