17939153. ADDITIVE FOR PHOTORESIST, PHOTORESIST COMPOSITION FOR EUV INCLUDING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 ADDITIVE FOR PHOTORESIST, PHOTORESIST COMPOSITION FOR EUV INCLUDING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ADDITIVE FOR PHOTORESIST, PHOTORESIST COMPOSITION FOR EUV INCLUDING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
ADDITIVE FOR PHOTORESIST, PHOTORESIST COMPOSITION FOR EUV INCLUDING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Ye Chan Kim of Hwaseong-si (KR)
Ju-Young Kim of Hwaseong-si (KR)
Hyun Woo Kim of Seongnam-si (KR)
Ju Hyeon Park of Hwaseong-si (KR)
Ji Cheol Park of Anyang-si (KR)
Hyun Ji Song of Anyang-si (KR)
Hong Gu Im of Hwaseong-si (KR)
ADDITIVE FOR PHOTORESIST, PHOTORESIST COMPOSITION FOR EUV INCLUDING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17939153 titled 'ADDITIVE FOR PHOTORESIST, PHOTORESIST COMPOSITION FOR EUV INCLUDING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Simplified Explanation
The patent application describes an additive for a photoresist used in the manufacturing of semiconductor devices. The additive is a copolymer consisting of two repeating units in a specific molar ratio.
- The additive is used in a photoresist composition for extreme ultraviolet (EUV) lithography.
- The copolymer additive consists of a first repeating unit represented by Chemical Formula 1-1 and a second repeating unit represented by Chemical Formula 2.
- The molar ratio of the first repeating unit to the second repeating unit in the copolymer is between 7:3 and 2:8.
Potential Applications
- Semiconductor device manufacturing
- Extreme ultraviolet (EUV) lithography
Problems Solved
- Enhances the performance of photoresist in EUV lithography
- Improves the quality and resolution of semiconductor devices
Benefits
- Enables more precise and accurate patterning of semiconductor devices
- Enhances the efficiency and reliability of the manufacturing process
- Provides a cost-effective solution for EUV lithography
Original Abstract Submitted
An additive for a photoresist, a photoresist composition for a EUV including the same, and a method for manufacturing a semiconductor device using the same, the additive including a copolymer that includes a first repeating unit represented by the following Chemical Formula 1-1, and a second repeating unit represented by the following Chemical Formula 2, wherein a molar ratio of the first repeating unit to the second repeating unit is 7:3 to 2:8,
- SAMSUNG ELECTRONICS CO., LTD.
- Jin Joo Kim of Seoul (KR)
- Ye Chan Kim of Hwaseong-si (KR)
- Ju-Young Kim of Hwaseong-si (KR)
- Ji Yup Kim of Suwon-si (KR)
- Hyun Woo Kim of Seongnam-si (KR)
- Ju Hyeon Park of Hwaseong-si (KR)
- Ji Cheol Park of Anyang-si (KR)
- Hyun Ji Song of Anyang-si (KR)
- Hong Gu Im of Hwaseong-si (KR)
- Suk Koo Hong of Suwon-si (KR)
- G03F7/004
- G03F7/039
- G03F7/20