17935502. NONVOLATILE MEMORY DEVICE HAVING CELL-OVER-PERIPHERY (COP) STRUCTURE WITH ADDRESS RE-MAPPING simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)

From WikiPatents
Jump to navigation Jump to search

NONVOLATILE MEMORY DEVICE HAVING CELL-OVER-PERIPHERY (COP) STRUCTURE WITH ADDRESS RE-MAPPING

Organization Name

SAMSUNG ELECTRONICS CO.,LTD.

Inventor(s)

Yonghyuk Choi of Suwon-si (KR)

Sangwan Nam of Hwaseong-si (KR)

Jaeduk Yu of Seoul (KR)

Sangwon Park of Seoul (KR)

Bongsoon Lim of Seoul (KR)

NONVOLATILE MEMORY DEVICE HAVING CELL-OVER-PERIPHERY (COP) STRUCTURE WITH ADDRESS RE-MAPPING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17935502 titled 'NONVOLATILE MEMORY DEVICE HAVING CELL-OVER-PERIPHERY (COP) STRUCTURE WITH ADDRESS RE-MAPPING

Simplified Explanation

The patent application describes a nonvolatile memory device that includes a first and second semiconductor layer, as well as a control circuit. The memory cell array consists of two vertical structures, each containing sub-blocks. The second semiconductor layer includes a lower substrate with address decoders and page buffer circuits. The first vertical structure has via areas with through-hole vias passing through it, and the first sub-blocks are arranged among these via areas. The control circuit groups the memory blocks into different groups based on their proximity to the via areas and performs address re-mapping.

  • The nonvolatile memory device includes a first and second semiconductor layer.
  • The memory cell array consists of two vertical structures with sub-blocks.
  • The second semiconductor layer includes a lower substrate with address decoders and page buffer circuits.
  • The first vertical structure has via areas with through-hole vias passing through it.
  • The first sub-blocks are arranged among the via areas.
  • The control circuit groups the memory blocks based on their proximity to the via areas and performs address re-mapping.

Potential Applications

  • Nonvolatile memory devices can be used in various electronic devices such as smartphones, tablets, and computers.
  • This technology can be applied in data storage systems for cloud computing and data centers.

Problems Solved

  • The memory device provides a more efficient and organized way of storing and accessing data.
  • The address re-mapping performed by the control circuit helps optimize memory block usage.

Benefits

  • The use of vertical structures and sub-blocks allows for a higher density of memory cells.
  • The through-hole vias and address re-mapping improve the overall performance and efficiency of the memory device.
  • The nonvolatile memory device can provide faster data access and storage capabilities.


Original Abstract Submitted

A nonvolatile memory device includes a first semiconductor layer, a second semiconductor layer and a control circuit. The memory cell array includes a first vertical structure on the first upper substrate and a second vertical structure on the second upper substrate, the first vertical structure includes first sub-blocks and the second vertical structure includes second sub-blocks. The second semiconductor layer includes a lower substrate that includes address decoders and page buffer circuits. The first vertical structure includes first via areas in which one or more through-hole vias are provided, through-hole vias pass through the first vertical structure. The first sub-blocks are arranged among the first via areas and the second sub-blocks are arranged among the second via areas. The control circuit groups the memory blocks into a plurality of groups based on whether the memory blocks is close to the first via areas and performs address re-mapping.

Retrieved from "http://wikipatents.org/index.php?title=17935502._NONVOLATILE_MEMORY_DEVICE_HAVING_CELL-OVER-PERIPHERY_(COP)_STRUCTURE_WITH_ADDRESS_RE-MAPPING_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,LTD.)&oldid=19100"