17933944. METHOD AND SYSTEM FOR TUNING A MEMORY DEVICE FOR HIGH-SPEED TRANSITIONS simplified abstract (Samsung Electronics Co., Ltd.)

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METHOD AND SYSTEM FOR TUNING A MEMORY DEVICE FOR HIGH-SPEED TRANSITIONS

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Shankar Athanikar of Bengaluru (IN)

Akhilesh Kumar Jaiswal of Bengaluru (IN)

Puneet Kukreja of Bengaluru (IN)

Sumeet Paul of Bengaluru (IN)

Vinay Kumar M N of Bengaluru (IN)

METHOD AND SYSTEM FOR TUNING A MEMORY DEVICE FOR HIGH-SPEED TRANSITIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17933944 titled 'METHOD AND SYSTEM FOR TUNING A MEMORY DEVICE FOR HIGH-SPEED TRANSITIONS

Simplified Explanation

The present disclosure describes a method and system for tuning a memory device to achieve high-speed transitions. When the default tuning parameters fail to tune the memory device during bus sampling, the host device sends an auto-tuning request to the memory device until certain conditions are met. The memory device receives the request, selects a set of tuning parameters from multiple sets, and transmits a tuning block to the host device based on the selected parameters. This process continues until the predefined conditions are satisfied, allowing for high-speed mode utilization and achieving high-speed transitions between the host and memory devices. This innovation also helps avoid initialization failure of the memory device.

  • The method and system enable tuning of a memory device for high-speed transitions.
  • If default tuning parameters fail, the host device sends an auto-tuning request to the memory device.
  • The memory device selects a set of tuning parameters from multiple sets and transmits a tuning block to the host device.
  • This process continues until predefined conditions are satisfied, allowing for high-speed mode utilization.
  • High-speed transitions can be achieved between the host and memory devices.
  • Initialization failure of the memory device can be avoided.

Potential Applications

This technology can be applied in various fields where high-speed transitions between memory devices and host devices are required. Some potential applications include:

  • Computer systems and servers
  • Data centers
  • High-performance computing
  • Networking equipment
  • Telecommunications devices

Problems Solved

The method and system described in this patent application solve the following problems:

  • Failure of bus sampling tuning in memory devices with default tuning parameters
  • Initialization failure of memory devices
  • Inability to achieve high-speed transitions between memory devices and host devices

Benefits

The use of this technology offers several benefits:

  • Improved performance and efficiency of memory devices
  • Enhanced speed and reliability of data transfers between memory devices and host devices
  • Avoidance of initialization failure in memory devices
  • Increased utilization of high-speed mode in memory devices


Original Abstract Submitted

The present disclosure relates to a method and system for tuning a memory device for high-speed transitions. Upon failure of bus sampling tuning of a memory device with default tuning parameters, the host device is configured to transmit an auto-tuning request to the memory device for until one or more pre-defined conditions are satisfied. The memory device is configured to receive the auto-tuning request from the host device, selects a set of tuning parameters from a plurality of sets of tuning parameters, and transmits a tuning block to the host device based on the selected set of tuning parameters, until one or more pre-defined conditions are satisfied. Thereby, the memory device can utilize high-speed mode and high-speed transitions can be achieved between host and memory devices. Thus, initialization failure of the memory device can also be avoided.