17933683. SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS simplified abstract (QUALCOMM Incorporated)
Contents
- 1 SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS
Organization Name
Inventor(s)
Junjing Bao of San Diego CA (US)
Chih-Sung Yang of Hsinchu City (TW)
Haining Yang of San Diego CA (US)
SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17933683 titled 'SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS
Simplified Explanation
The patent application describes a transistor with a metal gate structure, a dielectric layer, a metal cap, and a gate contact made of tungsten.
- The transistor includes a gate structure with a metal gate surrounded by a dielectric layer.
- A metal cap covers a portion of the metal gate not surrounded by the dielectric layer.
- The gate contact is made of tungsten and is in direct contact with the metal cap.
Potential Applications
This technology could be applied in the semiconductor industry for the development of advanced transistors with improved performance and reliability.
Problems Solved
1. Enhanced gate structure design for better transistor functionality. 2. Improved contact materials for increased efficiency and durability.
Benefits
1. Increased transistor performance. 2. Enhanced reliability and longevity. 3. Potential for smaller and more efficient electronic devices.
Potential Commercial Applications
Optimizing Transistor Gate Structures with Tungsten Gate Contacts for Improved Performance
Possible Prior Art
Prior art may include patents or publications related to transistor gate structures, dielectric layers, metal caps, and gate contact materials in semiconductor devices.
Unanswered Questions
What is the specific manufacturing process for integrating tungsten gate contacts in the transistor design?
The patent application does not provide detailed information on the specific steps involved in the manufacturing process for incorporating tungsten gate contacts in the transistor design.
How does the use of tungsten in the gate contact impact the overall cost of production for these transistors?
The patent application does not address the cost implications of using tungsten in the gate contact material and whether it affects the overall production costs of the transistors.
Original Abstract Submitted
In an aspect, a transistor comprises a gate structure having a metal gate, a dielectric layer at least partially surrounding the metal gate, a metal cap over a portion of the metal gate that is not surrounded by the dielectric layer, and a gate contact comprising tungsten in direct contact with the metal cap. In another aspect, a transistor comprises source, drain, and channel regions, a gate structure comprising a metal gate between gate spacers above the channel region, and a source or drain (S/D) contact structure. The S/D contact structure comprises an S/D barrier layer above at least a portion of the source or drain region and in direct contact with a gate spacer, and an S/D contact, comprising a first portion above the S/D barrier layer; and a second portion comprising tungsten, above the first portion.
