17932508. MULTIPLE COBALT IRON BORON LAYERS IN A FREE LAYER OF A MAGNETORESISTIVE SENSING ELEMENT simplified abstract (Infineon Technologies AG)
Contents
- 1 MULTIPLE COBALT IRON BORON LAYERS IN A FREE LAYER OF A MAGNETORESISTIVE SENSING ELEMENT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MULTIPLE COBALT IRON BORON LAYERS IN A FREE LAYER OF A MAGNETORESISTIVE SENSING ELEMENT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MULTIPLE COBALT IRON BORON LAYERS IN A FREE LAYER OF A MAGNETORESISTIVE SENSING ELEMENT
Organization Name
Inventor(s)
Bernhard Endres of Nabburg (DE)
Klemens Pruegl of Regensburg (DE)
Juergen Zimmer of Neubiberg (DE)
Michael Kirsch of Regensburg (DE)
Milan Agrawal of Muenchen (DE)
MULTIPLE COBALT IRON BORON LAYERS IN A FREE LAYER OF A MAGNETORESISTIVE SENSING ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17932508 titled 'MULTIPLE COBALT IRON BORON LAYERS IN A FREE LAYER OF A MAGNETORESISTIVE SENSING ELEMENT
Simplified Explanation
The abstract describes a tunnel magnetoresistive (TMR) sensing element with a free layer consisting of specific layers including CoFeB and NiFe.
- The TMR sensing element includes a first CoFeB layer, an interlayer, a second CoFeB layer, and a NiFe layer.
- The layers are arranged in a specific sequence to optimize the performance of the sensing element.
Potential Applications
The TMR sensing element with the described free layer could be used in:
- Magnetic field sensors
- Magnetic memory devices
Problems Solved
This technology helps in:
- Improving the sensitivity of magnetic sensors
- Enhancing the performance of magnetic memory devices
Benefits
The benefits of this technology include:
- Higher efficiency in detecting magnetic fields
- Increased data storage capacity in magnetic memory devices
Potential Commercial Applications
A potential commercial application for this technology could be in:
- Consumer electronics industry for improved sensors and memory devices
Possible Prior Art
One possible prior art for this technology could be:
- Previous patents related to TMR sensing elements with different layer configurations
Unanswered Questions
How does the performance of this TMR sensing element compare to existing technologies?
The article does not provide a direct comparison with other TMR sensing elements or technologies.
Are there any limitations or drawbacks to using this specific layer configuration in TMR sensing elements?
The article does not mention any potential limitations or drawbacks associated with the described layer configuration.
Original Abstract Submitted
A tunnel magnetoresistive (TMR) sensing element may include a free layer. The free layer of the TMR sensing element may include a first cobalt iron boron (CoFeB) layer, an interlayer over the first CoFeB layer, a second CoFeB layer over the interlayer, and a nickel iron (NiFe) layer over the second CoFeB layer.
