17896353. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Meng-Yu Lin of New Taipei City (TW)

Chun-Fu Cheng of Zhubei City (TW)

Hsiang-Hung Huang of Taipei City (TW)

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17896353 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The semiconductor structure described in the patent application includes two transistors, a metal rail, and source/drain contacts.

  • The first transistor has a gate structure, a first source/drain feature, and a second source/drain feature located on opposite sides of the gate structure.
  • The second transistor has a gate structure, a third source/drain feature directly over the first source/drain feature, and a fourth source/drain feature directly over the second source/drain feature.
  • The metal rail extends in one direction adjacent to the gate structure.
  • The first and second source/drain contacts each have an L-shape in a cross-sectional view, with the first contact connecting the first source/drain feature to the metal rail, and the second contact connecting the fourth source/drain feature to the metal rail.
      1. Potential Applications
  • This semiconductor structure could be used in integrated circuits for various electronic devices such as smartphones, computers, and sensors.
      1. Problems Solved
  • This structure helps in improving the performance and efficiency of transistors by providing a more compact and effective way of connecting source/drain features to the metal rail.
      1. Benefits
  • Enhanced functionality and reliability of semiconductor devices.
  • Improved electrical connectivity and signal transmission within the circuit.
  • Potential for smaller and more efficient electronic devices.


Original Abstract Submitted

A semiconductor structure includes a first transistor, a second transistor, a metal rail, and a first source/drain contact and a second source/drain contact. The first transistor has a gate structure, a first source/drain feature, and a second source/drain feature. The first source/drain feature and the second source/drain feature are on opposite sides of the gate structure. The second transistor has the gate structure, a third source/drain feature directly over the first source/drain feature, and a fourth source/drain feature directly over the second source/drain feature. The metal rail extends in an X-direction and adjacent to the gate structure in a Y-direction. The first source/drain contact and the second source/drain contact each has an L-shape in a Y-Z cross-sectional view. The first source/drain contact electrically connects the first source/drain feature to the metal rail. The second source/drain contact electrically connects the fourth source/drain feature to the metal rail.

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