17887042. SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Dmytro Apalkov of San Jose CA (US)

Jaewoo Jeong of San Jose CA (US)

Ikhtiar of San Jose CA (US)

SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17887042 titled 'SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE

Simplified Explanation

The abstract describes a patent application for a spin-orbit torque magnetic random-access memory (SOT-MRAM) device. The device consists of several layers including a substrate, a spin orbit torque line, a composite-metal-oxide seed layer, and a magnetic tunnel junction.

• The spin-orbit torque magnetic random-access memory (SOT-MRAM) device is the subject of the patent application.
• The device includes a substrate, which serves as the base for the other layers.
• Above the substrate, there is a spin orbit torque line, which is responsible for generating spin-orbit torque.
• The device also includes a composite-metal-oxide seed layer, which is located above the spin orbit torque line.
• Above the composite-metal-oxide seed layer, there is a magnetic tunnel junction, which is a key component of the SOT-MRAM device.
• The magnetic tunnel junction consists of a free layer, a main tunneling barrier layer, and a pinned layer.

Potential Applications:

• Memory storage devices: The SOT-MRAM device can be used in various memory storage applications, such as computer systems, mobile devices, and data centers.
• Non-volatile memory: SOT-MRAM offers non-volatile memory capabilities, meaning data is retained even when power is turned off. This makes it suitable for applications where data persistence is crucial.

Problems Solved:

• Energy efficiency: SOT-MRAM devices have the potential to be more energy-efficient compared to traditional memory technologies, reducing power consumption in electronic devices.
• Data retention: The non-volatile nature of SOT-MRAM solves the problem of data loss when power is interrupted, ensuring data integrity and persistence.

Benefits:

• Faster access times: SOT-MRAM devices can provide faster read and write access times compared to other memory technologies, improving overall system performance.
• High endurance: SOT-MRAM devices have high endurance, meaning they can withstand a large number of read and write cycles without degradation.
• Scalability: The technology used in SOT-MRAM devices allows for scalability, enabling the development of higher-density memory storage solutions.

Original Abstract Submitted

A spin-orbit torque magnetic random-access memory (SOT-MRAM) device includes a substrate, a spin orbit torque line above the substrate, a composite-metal-oxide seed layer above the spin orbit torque line, and a magnetic tunnel junction above the composite-metal-oxide seed layer. The magnetic tunnel junction includes a free layer above the composite-metal-oxide seed layer, a main tunneling barrier layer above the free layer, and a pinned layer above the main tunneling barrier layer.