17886753. SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Guan-Lin Chen of Hsinchu County (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Shi Ning Ju of Hsinchu City (TW)

Jung-Chien Cheng of Tainan City (TW)

Chih-Hao Wang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17886753 titled 'SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF

Simplified Explanation

The method described in the patent application involves the following steps:

• Etching trenches in a substrate to form semiconductor fins
• Filling one of the trenches with a dielectric fin
• Forming an insulation material in another trench
• Performing a recessing process to create a gap on top of the dielectric fin
• Filling the gap with a dielectric cap
• Forming a gate stack across the semiconductor fins and the dielectric fin

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1. 1. 1. Potential Applications

• Semiconductor manufacturing
• Integrated circuit fabrication

1. 1. 1. Problems Solved

• Improved performance of semiconductor devices
• Enhanced efficiency in manufacturing processes

1. 1. 1. Benefits

• Increased functionality of semiconductor devices
• Higher yield in manufacturing
• Improved reliability of integrated circuits

Original Abstract Submitted

A method of forming a semiconductor device includes etching trenches in a substrate to form semiconductor fins, filling a first one of the trenches with a dielectric fin, forming an insulation material in a second one of the trenches, performing a first recessing process to recess the insulation material and form a gap on a top of the dielectric fin, filling the gap with a dielectric cap, and forming a gate stack across the semiconductor fins and the dielectric fin.