17860351. SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING simplified abstract (Samsung Electronics Co., Ltd.)

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SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Inkwon Kim of Hwaseong-si (KR)

Yearin Byun of Hwaseong-si (KR)

Sangkyun Kim of Hwaseong-si (KR)

Sanghyun Park of Hwaseong-si (KR)

Hyosan Lee of Hwaseong-si (KR)

Wonki Hur of Suwon-si (KR)

SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17860351 titled 'SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING

Simplified Explanation

The abstract describes a slurry composition used in a chemical mechanical polishing (CMP) process, which does not contain or contains a very small amount of inorganic polishing particles. Instead, it includes a first organic polishing booster with a quaternary amine group, a second organic polishing booster with an amino acid, and a carrier.

  • The slurry composition is used in a chemical mechanical polishing (CMP) process.
  • It does not contain or contains a very small amount of inorganic polishing particles.
  • The slurry composition includes a first organic polishing booster with a quaternary amine group.
  • It also includes a second organic polishing booster with an amino acid.
  • The slurry composition is carried by a carrier.

Potential Applications

  • Chemical mechanical polishing (CMP) processes in various industries, such as semiconductor manufacturing, optical lens production, and metal polishing.

Problems Solved

  • Reduces or eliminates the need for inorganic polishing particles in CMP processes.
  • Provides an alternative slurry composition that can achieve effective polishing without relying on inorganic particles.

Benefits

  • Improved environmental friendliness by reducing the use of inorganic particles.
  • Potential cost savings by reducing the reliance on expensive inorganic polishing particles.
  • Enhanced polishing performance and control with the combination of organic polishing boosters.


Original Abstract Submitted

A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition including a first organic polishing booster including a quaternary amine group; a second organic polishing booster including an amino acid; and a carrier; wherein inorganic polishing particles are not included in the slurry composition or included in an amount of less than 0.01% by weight.

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