17857532. PHOTODIODE ELEMENT AND SENSOR AND ELECTRONIC DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
PHOTODIODE ELEMENT AND SENSOR AND ELECTRONIC DEVICE
Organization Name
Inventor(s)
Gae Hwang Lee of Seongnam-si (KR)
Hyun Bum Kang of Yongin-si (KR)
Youngjun Yun of Seongnam-si (KR)
Jong Won Chung of Hwaseong-si (KR)
PHOTODIODE ELEMENT AND SENSOR AND ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17857532 titled 'PHOTODIODE ELEMENT AND SENSOR AND ELECTRONIC DEVICE
Simplified Explanation
The abstract describes a photodiode element and its application in a sensor and electronic device. The photodiode element consists of a first electrode, a second electrode, a photoelectric conversion layer, a light-emitting layer, and a first charge transport layer.
- The photodiode element has a first electrode and a second electrode facing each other.
- A photoelectric conversion layer is placed between the first and second electrodes, which absorbs light in a specific wavelength range.
- A light-emitting layer is positioned between the photoelectric conversion layer and the second electrode, emitting light at a wavelength within the same range.
- A first charge transport layer is located between the photoelectric conversion layer and the light-emitting layer.
Potential applications of this technology:
- Optical sensors in various electronic devices such as smartphones, cameras, and wearable devices.
- Biomedical imaging devices for capturing images in specific wavelength ranges.
- Industrial applications for detecting and measuring light in specific wavelength ranges.
Problems solved by this technology:
- Efficient conversion of light into electrical signals by utilizing the photoelectric conversion layer.
- Precise emission of light at a specific wavelength by the light-emitting layer.
- Improved charge transport between the photoelectric conversion and light-emitting layers.
Benefits of this technology:
- Enhanced sensitivity and accuracy in detecting and measuring light.
- Improved efficiency and performance of optical sensors.
- Enables the development of compact and high-resolution imaging devices.
Original Abstract Submitted
Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.