17851290. Ferroelectric Film with Buffer Layers for Improved Reliability of Metal-Insulator-Metal Capacitor simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

Ferroelectric Film with Buffer Layers for Improved Reliability of Metal-Insulator-Metal Capacitor

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Kisik Choi of Watervliet NY (US)

Paul Charles Jamison of Hopewell Junction NY (US)

Takashi Ando of Eastchester NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Huimei Zhou of Albany NY (US)

Miaomiao Wang of Albany NY (US)

Ernest Y. Wu of Essex Junction VT (US)

Ferroelectric Film with Buffer Layers for Improved Reliability of Metal-Insulator-Metal Capacitor - A simplified explanation of the abstract

This abstract first appeared for US patent application 17851290 titled 'Ferroelectric Film with Buffer Layers for Improved Reliability of Metal-Insulator-Metal Capacitor

Simplified Explanation

The patent application describes a new design for metal-insulator-metal capacitors that have increased reliability. The capacitors include multiple dielectric layers between two electrodes, with a ferroelectric film in the middle. The ferroelectric film is made up of a combination of two dielectric materials with different properties. The first and second dielectric materials can be HfO and/or ZrO in a crystalline phase, either combined in a single layer or present in separate layers. The capacitors can be stacked on top of each other to create a capacitor device. The method of forming these capacitors is also described.

• Metal-insulator-metal capacitors with increased reliability
• Multiple dielectric layers between electrodes
• Ferroelectric film made up of a combination of two dielectric materials
• Dielectric materials can be HfO and/or ZrO in a crystalline phase
• Capacitors can be stacked to create a capacitor device
• Method of forming the capacitors is provided

Potential Applications

• Electronics industry
• Energy storage systems
• Integrated circuits

Problems Solved

• Increased reliability of metal-insulator-metal capacitors
• Improved performance of capacitors in electronic devices

Benefits

• Enhanced reliability of capacitors
• Improved performance of electronic devices
• Increased energy storage capacity

Original Abstract Submitted

Metal-insulator-metal capacitor designs with increased reliability are provided. In one aspect, a capacitor includes: first and second electrodes; and multiple dielectric layers present in between the first and second electrodes, including a first buffer layer disposed on the first electrode, a ferroelectric film disposed on the first buffer layer, and a second buffer layer disposed on the ferroelectric film, where the ferroelectric film includes a combination of at least a first dielectric material and a second dielectric material having a higher κ value than either the first or second buffer layers. The first and second dielectric materials can each include HfOand/or ZrO, in a crystalline phase, which can be combined in a common layer, or present in different layers. A capacitor device having the present capacitors stacked one on top of another is also provided, as is a method of forming the present capacitors.