17838448. SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE simplified abstract (NANYA TECHNOLOGY CORPORATION)

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SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

HSIH-YANG Chiu of TAOYUAN CITY (TW)

SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17838448 titled 'SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE

Simplified Explanation

The present application describes a semiconductor device that includes various components such as a substrate, insulative films, electrodes, impurity regions, and a capping layer.

  • The device consists of a substrate, which serves as the foundation for the other components.
  • A first insulative film is placed on top of the substrate.
  • Surrounding the first insulative film is a second insulative film, which partially encloses it.
  • A first electrode is positioned on the first insulative film, and it is covered by a capping layer.
  • A second electrode is located above the second insulative film and covers the capping layer.
  • The substrate contains a plurality of first and second impurity regions.
  • The first impurity regions extend beneath and across both the second electrode and the first electrode.
  • The second impurity regions are exposed through the second insulative film and the second electrode.

Potential applications of this technology:

  • This semiconductor device can be used in various electronic devices such as smartphones, computers, and tablets.
  • It can be utilized in power management systems, integrated circuits, and memory devices.
  • The device can also find applications in sensors, communication devices, and automotive electronics.

Problems solved by this technology:

  • The semiconductor device provides improved electrical conductivity and insulation due to the presence of insulative films and impurity regions.
  • It allows for efficient power management and signal transmission within electronic devices.
  • The device helps in reducing signal interference and noise, resulting in enhanced performance and reliability.

Benefits of this technology:

  • The semiconductor device offers a compact and efficient design, making it suitable for miniaturized electronic devices.
  • It provides improved electrical performance, leading to faster data processing and higher efficiency.
  • The device offers better protection against external factors such as moisture, dust, and physical damage, ensuring longevity and durability.


Original Abstract Submitted

The present application provides a semiconductor device. The semiconductor device includes a substrate, a first insulative film, a second insulative film, a first electrode, a second electrode, a capping layer, a plurality of first impurity regions and a plurality of second impurity regions. The first insulative film is disposed on the substrate. The second insulative film at least partially surrounds the first insulative film. The first electrode and the capping layer, covering the first electrode, are disposed on the first insulative film. The second electrode is disposed over the second insulative film and covers the capping layer. The first and second impurity regions are disposed in the substrate. Each of the first impurity regions extends under and across the second electrode and the first electrode. The second impurity regions are exposed through the second insulative film and the second electrode.

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