17829446. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hyeran Lee of Hwaseong-si (KR)

Kiseok Lee of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17829446 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor device with specific features to improve its performance and functionality. Here are the key points:

  • The device includes a substrate with an active portion defined by a device isolation pattern.
  • A word line and a bit line are present in the substrate, crossing the active portion.
  • The word line extends in a first direction, while the bit line extends in a second direction intersecting the first direction.
  • A first pad is located on an end portion of the active portion.
  • A first contact is positioned on the first pad, adjacent to the bit line in the first direction.
  • An insulating separation pattern is present on the word line, adjacent to the first contact in the second direction.
  • The first contact consists of a barrier pattern on the first pad and a conductive pattern extending vertically from the barrier pattern.
  • The side surface of the conductive pattern of the first contact is in direct contact with the insulating separation pattern.

Potential applications of this technology:

  • Semiconductor devices used in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.
  • Integrated circuits for memory devices, processors, and other components in electronic systems.
  • High-speed data processing and storage applications.

Problems solved by this technology:

  • Improved performance and functionality of semiconductor devices.
  • Enhanced electrical connectivity and signal transmission between different components.
  • Reduction in signal interference and crosstalk.

Benefits of this technology:

  • Increased speed and efficiency of data processing and storage.
  • Enhanced reliability and durability of semiconductor devices.
  • Improved integration and miniaturization of electronic components.
  • Potential for cost reduction in manufacturing processes.


Original Abstract Submitted

A semiconductor device includes a substrate including an active portion defined by a device isolation pattern; a word line in the substrate, the word line crossing the active portion and extending in a first direction; a bit line crossing the active portion and the word line and extending in a second direction intersecting the first direction; a first pad on an end portion of the active portion; a first contact on the first pad and adjacent to the bit line in the first direction; and an insulating separation pattern on the word line and adjacent to the first contact in the second direction, wherein the first contact includes a barrier pattern on the first pad, and a conductive pattern vertically extending from the barrier pattern, and a side surface of the conductive pattern of the first contact is in direct contact with the insulating separation pattern.

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